AlCu Pitting Prevention in Post Etch Cleaning

Annamaria Votta; Roberto Morandi; Marcello Ravasio; Giovanni Tagliabue; Francesco Pipia; Mauro Alessandri

doi:10.4028/www.scientific.net/SSP.282.213

Paper Titles

Cleaning of High Aspect Ratio STI Structures for Advanced Logic Devices by Implementation of a Surface Modification Drying Technique
p.190

Pattern Collapse-Free Drying with Sacrificial Gap Fill Polymers
p.194

Factors Influencing Drying Induced Pattern Collapse
p.201

300 mm Wafer Development for Pattern Collapse Evaluations
p.207

AlCu Pitting Prevention in Post Etch Cleaning
p.213

Investigation of Defectivity Coming from the Back Side of Wafers during AlCu Polymer Removal Processes Performed in a Batch Spray Tool
p.220

Aluminum Cleaning on Single Wafer Tool: A Case Study with Diluted HF
p.226

Atomic Layer Deposition of TiN below 600 K Using N₂H₄
p.232

Process Parameter Control for BEOL TiN Hard Mask Etch-Back
p.238

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AlCu Pitting Prevention in Post Etch Cleaning

Abstract:

Three different cases of wet polymer removal in presence of AlCu are described: namely a) oxide passivation opening, b) vias etch and c) pad patterning. The occurrence of pitting at such levels is analyzed and linked to halogens presence. Moving from these results, a proposal to limit such kind of defects is given, focusing on a trimmed DIW rinsing step and on a possible AlCu passivation through a plasma ashing process.