300 mm Wafer Development for Pattern Collapse Evaluations

Abstract:

Over the past decade, many advanced drying techniques have been developed to reduce and prevent pattern collapse of high aspect ratio (HAR) structures after wet processing. However, different dimensions, profiles and materials of HAR structures used in literature make it difficult to compare the efficiency of different drying processes. In this work, standard 300 mm wafer test structures, characterization and analysis techniques have been developed for quantitative analysis of pattern collapse rate as a function of the intrinsic mechanical property of HAR structures. Such standardized single wafer evaluations are important for benchmarking different drying techniques.

• Periodical: Solid State Phenomena (Volume 282)
• Pages: 207-210
• DOI: https://doi.org/10.4028/www.scientific.net/SSP.282.207
• Online since: August 2018
• Authors: Xiu Mei Xu*, Tao Zheng, Mohamed Saib, Farid Sebaai, Jeroen van de Kerkhove, Nandi Vrancken, Guy Vereecke, Frank Holsteyns
• Keywords: Characterization Techniques, High Aspect Ratio (HAR) Structures, Mechanical Rigidity, Pattern Collapse

References

[1] D.L. Goldfarb, J. de Pablo, P.F. Nealey, J.P. Simons, W.M. Moreau, M. Angelopoulos, J.J. de Pablo, P.F. Nealey, J.P. Simons, W.M. Moreau, M. Angelopoulos, Pap. from 44th Int. Conf. Electron, Ion, Phot. Beam Technol. Nanofabrication 18 (2000).

DOI: 10.1116/1.1313582

[2] T. Tanaka, M. Morigami, H. Oizumi, T. Ogawa, Jpn. J. Appl. Phys. 32 (1993) 5813–5814.

[3] Y. Jincao, M.A. Matthews, C.H. Darvin, Ind. Eng. Chem. Res. 40 (2001) 5858–5860.

DOI: 10.1021/ie010424h

[4] T. Watanabe, T. Toshima, M. Nakamori, K. Egashira, Y. Ido, N. Matsumoto, T. Orii, ECS Trans. 58 (2013) 191–196.

DOI: 10.1149/05806.0191ecst

[5] N. Vrancken, S. Sergeant, G. Vereecke, G. Doumen, F. Holsteyns, H. Terryn, S. De Gendt, X. Xu, Langmuir 33 (2017) 3601–3609.

DOI: 10.1021/acs.langmuir.6b04471

[6] X.M. Xu, G. Vereecke, E. van den Hoogen, J. Smeers, S. Armini, T. Delande, H. Struyf, Solid State Phenom. 195 (2012) 235–238.

DOI: 10.4028/www.scientific.net/ssp.195.235

[7] X. Xu, G. Vereecke, C. Chen, G. Pourtois, S. Armini, N. Verellen, W.-K. Tsai, D.-W. Kim, E. Lee, C.-Y. Lin, P. Van Dorpe, H. Struyf, F. Holsteyns, V. Moshchalkov, J. Indekeu, S. De Gendt, ACS Nano 8 (2014) 885–93.

DOI: 10.1021/nn405621w

[8] G. Vereecke, X. Xu, W.K. Tsai, H. Yang, S. Armini, T. Delande, G. Doumen, F. Kentie, X. Shi, I. Simms, K. Nafus, F. Holsteyns, H. Struyf, S. De Gendt, ECS J. Solid State Sci. Technol. 3 (2014) N3095–N3100.

DOI: 10.1149/2.013401jss

[9] G. Vereecke, X. Xu, W. Tsai, H. Yang, S. Armini, D. Tinne, G. Doumen, K. Frank, in:, ECS Trans., 2013, p.2115.

[10] N. Vrancken, G. Vereecke, S. Bal, S. Sergeant, G. Doumen, F. Holsteyns, H. Terryn, S. De Gendt, X. Xu, Solid State Phenom. 255 (2016) 136–140.

DOI: 10.4028/www.scientific.net/ssp.255.136

[11] T. Kagalwala, A. Vaid, S. Mahendrakar, M. Lenahan, F. Fang, P. Isbester, M. Shifrin, Y. Etzioni, A. Cepler, N. Yellai, P. Dasari, C. Bozdog, Proc. SPIE 9778 (2016) 97781W.

DOI: 10.1117/12.2228329

[12] M.H. Madsen, P. Hansen, Surf. Topogr. Metrol. Prop. 4 (2016) 23003.

[13] W.B. I. Vos, D. Hellin, J. Vertommen, M. Demand, ECS Trans. 41 (2011) 189–196.