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Silicon Carbide and Related Materials - 1999

Materials Science Forum Volumes 338 - 342

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• p1599 A Comparison of Aluminum Nitride Freely Nucleated and Seeded on 6H-Silicon Carbide   [ 199 K ]
  Authors: J.H. Edgar, L.H. Robins, S.E. Coatney, L. Liu, J. Chaudhuri, K. Ignatiev, Z. Rek
• p1603 Low Frequency Noise in n-GaN with High Electron Mobility   [ 187 K ]
  Authors: Sergey L. Rumyantsev, David C. Look, Michael E. Levinshtein, M. Asif Khan, G. Simin, V. Adivarahan, J. Molnar, Michael S. Shur
• p1609 Role of Alloy Fluctuations in InGaN-Based LEDs and Laser Diodes   [ 377 K ]
  Authors: Shuji Nakamura
• p1615 Influence of Annealing Conditions on Dopant Activation of Si⁺ and Mg⁺ Implanted GaN   [ 216 K ]
  Authors: A. Suvkhanov, N. Parikh, I.O. Usov, J. Hunn, S. Withrow, D. Thomson, Thomas Gehrke, Robert F. Davis, L.Ya. Krasnobaev
• p1619 Ohmic Contact Formation on Silicon-doped Gallium Nitride Epilayers by Low Temperature Annealing
  Authors: L.S. Tan, A. Raman, K.M. Ng, S.J. Chua, A.T.S. Wee, S.L. Lim
• p1623 Time-Resolved Photoluminescence Measurements of InGaN Light-Emitting Diodes   [ 206 K ]
  Authors: Milan Pophristic, F.H. Long, C.A. Tran, Ian T. Ferguson
• p1627 GaN PIN Photodiodes Grown on Sapphire and SiC Substrates   [ 167 K ]
  Authors: G.M. Smith, M.F. Chriss, F.D. Tamweber, K.S. Boutros, J.S. Flynn, D.M. Keogh
• p1631 Temperature Dependent Performance of GaN Schottky Diode Rectifiers   [ 190 K ]
  Authors: X.A. Cao, G.T. Dang, A.P. Zhang, F. Ren, S.J. Pearton, C.M. Lee, C.-C. Chuo, J.-I. Chyi, G.C. Chi, J. Han, S.N.G. Chu, R.G. Wilson
• p1635 Monte Carlo Simulation of Gunn Effect and Microwave Power Generation at 240 GHz in n⁺-n^--n-n⁺ GaN Structures   [ 247 K ]
  Authors: Jian H. Zhao, Viktor Gružinskis, M. Weiner, M. Pan, P. Shiktorov, E. Starikov
• p1639 DC and Large-Signal RF Performance of Recessed Gate GaN MESFETs Fabricated by the Photoelectrochemical Etching Process   [ 262 K ]
  Authors: Won Sang Lee, Ki Woong Chung, Moo Whan Shin
• p1643 Improved 10-GHz Operation of GaN/AlGaN HEMTs on Silicon Carbide   [ 229 K ]
  Authors: S.T. Sheppard, K. Doverspike, M. Leonard, W.L. Pribble, S.T. Allen, John J. Palmour
• p1647 Characterization of AlGaN/GaN HEMT Devices Grown by MBE   [ 209 K ]
  Authors: T.W. MacElwee, J.A. Bardwell, H. Tang, J.B. Webb
• p1651 A Comparative Study of n-p GaN/SiC Heterojunction and p-n 6h-SiC Homojunction Diodes   [ 217 K ]
  Authors: J. Vacas, H. Lahrèche, Teresa Monteiro, C. Gaspar, Eduarda Pereira, Christian Brylinski, M.A. di Forte-Poisson
• p1655 Electric Characteristics of 6H-SiC/GaN Isotype n-n Heterojunctions   [ 191 K ]
  Authors: N.I. Kuznetsov, A.E. Nikolaev, Yu.V. Melnik, Irina P. Nikitina