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Silicon Carbide and Related Materials 2003

Materials Science Forum Volumes 457 - 460

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• p71 Free Growth of 4H-SiC by Sublimation Method   [ 435 K ]
  Authors: Jean Marc Dedulle, Mikhail Anikin, Michel Pons, Elisabeth Blanquet, Alexander Pisch, Roland Madar, Claude Bernard
• p75 Advanced PVT Growth of 2 & 3-Inch Diameter 6H SiC Crystals   [ 1009 K ]
  Authors: Thomas Anderson, Donovan L. Barrett, J. Chen, W.T. Elkington, Ejiro Emorhokpor, A. Gupta, C.J. Johnson, R.H. Hopkins, Charles Martin, Thomas Kerr, E. Semenas, Andrew E. Souzis, C.D. Tanner, Murugesu Yoganathan, Ilya Zwieback
• p79 Radial Expansion Growth of SiC Single Crystals with Higher Crystal Quality   [ 274 K ]
  Authors: Tatsuo Fujimoto, Hiroshi Tsuge, Masakazu Katsuno, Noboru Ohtani, Hirokatsu Yashiro, Masashi Nakabayashi
• p83 Growth and Characterization of SiC Bulk Crystals Grown on an Off-Oriented (11-20) Seed Crystal   [ 122 K ]
  Authors: Masakazu Katsuno, Noboru Ohtani, Tatsuo Fujimoto, Hirokatsu Yashiro
• p87 Growth of Bulk SiC by Halide Chemical Vapor Deposition   [ 115 K ]
  Authors: M. Fanton, Marek Skowronski, David W. Snyder, Hun Jae Chung, Saurav Nigam, B. Weiland, Sung Wook Huh
• p91 Characterization of Thick 2-Inch 4H-SiC Layers Grown by the Continuous Feed-Physical Vapor Transport Method   [ 267 K ]
  Authors: Didier Chaussende, Carole Balloud, Laurent Auvray, Francis Baillet, Marcin Zielinski, Sandrine Juillaguet, Michel Mermoux, Etienne Pernot, Jean Camassel, Michel Pons, Roland Madar
• p95 Effect of Thermal Field on Interface Step Structures during PVT Growth of (0001)Si 6H-SiC   [ 257 K ]
  Authors: Z.G. Herro, Boris M. Epelbaum, Matthias Bickermann, Pierre M. Masri, Albrecht Winnacker
• p99 Large Diameter and Long Length Growth of SiC Single Crystal   [ 263 K ]
  Authors: Tomohisa Kato, Takaya Ohno, Fusao Hirose, Naoki Oyanagi, Shinichi Nishizawa, Kazuo Arai
• p103 Effect of Crucible Design on the Shape and the Quality in 6H-SiC Crystals Grown by Physical Vapor Transport   [ 244 K ]
  Authors: Myung Yoon Um, Ho Keun Song, Hoon Joo Na, Dae Hwan Kim, In Bok Song, Sang Yong Jung, Jae Kyeong Jeong, Jae Bin Lee, Hyeong Joon Kim
• p107 Sublimation Growth of SiC Crystal Using Modified Crucible Design on 4H-SiC {03-38} Substrate and Defect Analysis   [ 397 K ]
  Authors: Tomoaki Furusho, H. Takagi, S. Ota, Hiromu Shiomi, Shigehiro Nishino
• p111 Natural Crystal Habit and Preferential Growth Directions during PVT of Silicon Carbide   [ 1 M ]
  Authors: Z.G. Herro, Boris M. Epelbaum, Matthias Bickermann, Pierre M. Masri, Christoph Seitz, Andreas Magerl, Albrecht Winnacker
• p115 High Quality SiC Bulk Growth by Sublimation Method using Elemental Silicon and Carbon Powder as SiC Source Materials   [ 69 K ]
  Authors: S. Ota, Tomoaki Furusho, H. Takagi, S. Oshima, Shigehiro Nishino
• p119 Flux Growth of SiC Crystals from Eutectic Melt SiC-B₄C   [ 646 K ]
  Authors: Boris M. Epelbaum, P.A. Gurzhiyants, Z.G. Herro, Matthias Bickermann, Albrecht Winnacker
• p123 Solution Growth of Self-Standing 6H-SiC Single Crystal Using Metal Solvent   [ 1020 K ]
  Authors: Kazuhiko Kusunoki, S. Munetoh, Kazuhito Kamei, Mitsuhiro Hasebe, Toru Ujihara, Kazuo Nakajima
• p127 The Effect of a Periodic Movement on the Die of the Bottom Line of the Melt/Gas Meniscus in the Case of Silicon Filaments Grown from the Melt in a Vacuum by Edge-Defined Film-Fed Growth Method   [ 74 K ]
  Authors: L. Braescu, A.M. Balint, St. Balint