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Silicon Carbide and Related Materials 2005

Materials Science Forum Volumes 527 - 529

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• p59 A Study of Nitrogen Incorporation in PVT Growth of n⁺ 4H SiC   [ 175 K ]
  Authors: Darren M. Hansen, Gil Yong Chung, Mark J. Loboda
• p63 In Situ Observation of Mass Transfer in the CF-PVT Growth Process by X-Ray Imaging   [ 318 K ]
  Authors: Didier Chaussende, Peter J. Wellmann, M. Ucar, Michel Pons, Roland Madar
• p67 Growth and Surface Morphologies of 6H SiC Bulk and Epitaxial Crystals   [ 1 M ]
  Authors: Govindhan Dhanaraj, Yi Chen, Michael Dudley, Hui Zhang
• p71 Processing of Poly-SiC Substrates with Large Grains for Wafer-Bonding   [ 651 K ]
  Authors: Guy Chichignoud, Laurent Auvray, Elisabeth Blanquet, Mikhail Anikin, Etienne Pernot, Jean Marie Bluet, Patrick Chaudouët, Michel Mermoux, Catherine Moisson, Fabrice Letertre, Michel Pons, Roland Madar
• p75 Modeling and Experimental Verification of SiC M-PVT Bulk Crystal Growth   [ 136 K ]
  Authors: Peter J. Wellmann, Ralf Müller, Michel Pons
• p79 Basal Plane Dislocation Dynamics in Highly p-Type Doped versus Highly n-Type Doped SiC   [ 138 K ]
  Authors: Peter J. Wellmann, Desirée Queren, Ralf Müller, Sakwe Aloysius Sakwe, Ulrike Künecke
• p83 High Quality SiC Crystals Grown by the Physical Vapor Transport Method with a New Crucible Design   [ 288 K ]
  Authors: Kap Ryeol Ku, Jung Kyu Kim, Jung Doo Seo, Ju Young Lee, Myung Ok Kyun, Won Jae Lee, Geun Hyoung Lee, Il Soo Kim, Byoung Chul Shin
• p87 Active Thermal Interaction of Source and Crystal Surfaces in PVT SiC Crystal Growth   [ 406 K ]
  Authors: Krzysztof Grasza, Emil Tymicki, Jaroslaw Kisielewski
• p91 The Influence of SiC Powder Source on 6H-SiC Single Crystals Grown by the Sublimation Method   [ 448 K ]
  Authors: Jae Woo Kim, Soo Hyung Seo, Kwan Mo Kim, Joon Suk Song, Tae Sung Kim, Myung Hwan Oh
• p95 Polytype Control in 6H-SiC Grown via Sublimation Method   [ 151 K ]
  Authors: Xian Xiang Li, Shou Zhen Jiang, Xiao Bo Hu, Jie Dong, Juan Li, Xiu Fang Chen, Li Wang, Xian Gang Xua, Min Hua Jiang
• p99 Characterization of Bulk <111> 3C-SiC Single Crystals Grown on 4H-SiC by the CF-PVT Method   [ 1 M ]
  Authors: Laurence Latu-Romain, Didier Chaussende, Carole Balloud, Sandrine Juillaguet, L. Rapenne, Etienne Pernot, Jean Camassel, Michel Pons, Roland Madar
• p103 Hybrid Physical-Chemical Vapor Transport Growth of SiC Bulk Crystals   [ 182 K ]
  Authors: Mark A. Fanton, Qiang Li, A.Y. Polyakov, R.L. Cavalero, R.G Ray, B.E. Weiland, Marek Skowronski
• p107 SiC HTCVD Simulation Modified by Sublimation Etching   [ 146 K ]
  Authors: Yasuo Kito, Emi Makino, Kei Ikeda, Masao Nagakubo, Shoichi Onda
• p111 Gas Fed Top-Seeded Solution Growth of Silicon Carbide   [ 774 K ]
  Authors: Didier Chaussende, Michel Pons, Roland Madar
• p115 Growth of SiC Single Crystal from Si-C-(Co, Fe) Ternary Solution   [ 1 M ]
  Authors: Nobuyoshi Yashiro, Kazuhiko Kusunoki, Kazuhito Kamei, Mitsuhiro Hasebe, Toru Ujihara, Kazuo Nakajima