Paper Title
Authors: Daisuke Nakamura
Abstract:Recent reports on the impact of elementary dislocations on device performance and reliability suggest not only micropipe defects but also...
Authors: H. J. Rost, M. Schmidbauer, D. Siche
Abstract:The defect distribution in 4H-SiC single crystals in dependence on the seed polarity and its off-orientation was investigated by...
Authors: Roman Drachev, E. Deyneka, C. Rhodes, J. Schupp, Tangali S. Sudarshan
Abstract:The ability to set and accurately control the desired growth conditions is crucial in order to attain high quality bulk growth of Silicon...
Authors: A.Y. Polyakov, Mark A. Fanton, Marek Skowronski, Hun Jae Chung, Saurav Nigam, Sung Wook Huh
Abstract:A novel approach to the high growth rate Chemical Vapor Deposition of SiC is described. The Halide Chemical Vapor Deposition (HCVD) method...
Authors: Saurav Nigam, Hun Jae Chung, Sung Wook Huh, J.R. Grim, A.Y. Polyakov, Mark A. Fanton, B.E. Weiland, David Snyder, Marek Skowronski
Abstract:Growth rates and relative stability of 6H- and 4H-SiC have been studied as a function of growth conditions during Halide Chemical Vapor...
Authors: Jason R. Jenny, D.P. Malta, V.T. Tsvetkov, Mrinal K. Das, H. McD. Hobgood, Calvin H. Carter Jr.
Abstract:To devise a means of circumventing the cost of thick SiC epitaxy to generate drift layers in PiN diodes for >10kV operation, we have...
Authors: Tomoaki Furusho, Ryota Kobayashi, Taro Nishiguchi, M. Sasaki, K. Hirai, Toshihiko Hayashi, Hiroyuki Kinoshita, Hiromu Shiomi
Abstract:Growth of 4H-SiC bulk crystals on 4H-SiC {03-38} seeds was done. 4H-SiC {03-38} is obtained by inclining the c-plane toward <01-10> at a...
Showing 1 to 10 of 379 Paper Titles