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Silicon Carbide and Related Materials 2007

Materials Science Forum Volumes 600 - 603

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• p47 Simulation Study for HTCVD of SiC Using First-Principles Calculation and Thermo-Fluid Analysis   [ 167 K ]
  Authors: Yasuo Kito, Emi Makino, Kenji Inaba, Norikazu Hosokawa, Hidehiko Hiramatsu, Jun Hasegawa, Shoichi Onda, Hideyuki Tsuboi, Hiromitsu Takaba, Akira Miyamoto
• p51 Computational Analysis of SiC HTCVD from Silicon Tetrachloride and Propane   [ 224 K ]
  Authors: Yuri N. Makarov, R.A. Talalaev, A.N. Vorob'ev, Mark S. Ramm, Maxim V. Bogdanov
• p55 Growth of 2H-SiC Single Crystals in a C-Li-Si Ternary Melt System   [ 298 K ]
  Authors: Mamoru Imade, Takashi Ogura, Masahiro Uemura, Fumio Kawamura, Masashi Yoshimura, Yasuo Kitaoka, Yusuke Mori, Takatomo Sasaki, Masanobu Yamazaki, Shigekazu Suwabe
• p59 Solution Growth of SiC Crystals in Si-Ti and Si-Ge-Ti Solvents   [ 2 M ]
  Authors: Ryo Tanaka, Kazuaki Seki, Satoshi Komiyama, Toru Ujihara, Yoshikazu Takeda
• p63 Stability Growth Condition for 3C-SiC Crystals by Solution Technique   [ 481 K ]
  Authors: Toru Ujihara, Ryosuke Maekawa, Ryo Tanaka, Katsuhiro Sasaki, Kotaro Kuroda, Yoshikazu Takeda
• p67 Structural Characterization of CF-PVT Grown Bulk 3C-SiC   [ 756 K ]
  Authors: Alkyoni Mantzari, Frédéric Mercier, Maher Soueidan, Didier Chaussende, Gabriel Ferro, Efstathios K. Polychroniadis
• p71 Comparative Study of Differently Grown 3C-SiC Single Crystals with Birefringence Microscopy   [ 501 K ]
  Authors: Didier Chaussende, Frédéric Mercier, Roland Madar, Michel Pons
• p77 SiC Epitaxial Growth on Multiple 100-mm Wafers and its Application to Power-Switching Devices   [ 1 M ]
  Authors: Albert A. Burk, Michael J. O'Loughlin, Joseph J. Sumakeris, C. Hallin, Elif Berkman, Vijay Balakrishna, Jonathan Young, Lara Garrett, Kenneth G. Irvine, Adrian R. Powell, Y. Khlebnikov, R.T. Leonard, C. Basceri, Brett A. Hull, Anant K. Agarwal
• p83 Silicon Carbide Growth:C/Si Ratio Evaluation and Modeling   [ 216 K ]
  Authors: Michel Pons, Shinichi Nishizawa, Peter J. Wellmann, Elisabeth Blanquet, Didier Chaussende, Jean Marc Dedulle, Roland Madar
• p89 Challenges for Improving the Crystal Quality of 3C-SiC Verified with MOSFET Performance   [ 792 K ]
  Authors: Hiroyuki Nagasawa, Kuniaki Yagi, Takamitsu Kawahara, Naoki Hatta, Masayuki Abe, Adolf Schöner, Mietek Bakowski, Per Ericsson, Gerhard Pensl
• p95 Advances in Multi- and Single-Wafer SiC Epitaxy for the Production and Development of Power Diodes   [ 194 K ]
  Authors: Christian Hecht, Bernd Thomas, René A. Stein, Peter Friedrichs
• p99 Extremely Uniform, High Quality SiC Epitaxy on 100-mm Substrates   [ 225 K ]
  Authors: Joseph J. Sumakeris, Jason Henning, Michael J. O'Loughlin, Saptharishi Sriram, Vijay Balakrishna
• p103 High Quality Epitaxial Growth on 4° Off-Axis 4H SiC with Addition of HCl   [ 5 M ]
  Authors: Jie Zhang, Janice Mazzola, Swapna G. Sunkari, Gray Stewart, Paul B. Klein, Rachael M. Ward, E.R. Glaser, Kok Keong Lew, D. Kurt Gaskill, Igor Sankin, Vlad Bondarenko, David Null, David C. Sheridan, Michael S. Mazzola
• p107 Homoepitaxial Growth of 4H-SiC on On-Axis Si-Face Substrates Using Chloride-Based CVD   [ 1 M ]
  Authors: Stefano Leone, Henrik Pedersen, Anne Henry, Olof Kordina, Erik Janzén
• p111 Development of a High Rate 4H-SiC Epitaxial Growth Technique Achieving Large-Area Uniformity   [ 192 K ]
  Authors: Masahiko Ito, L. Storasta, Hidekazu Tsuchida