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Silicon Carbide and Related Materials 2009

Materials Science Forum Volumes 645 - 648

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• p55 Study of the Spontaneous Nucleation of 3C-SiC Single Crystals Using CF-PVT Technique   [ 829 K ]
  Authors: Irina G. Galben-Sandulache, Guoli L. Sun, Jean Marc Dedulle, Thierry Ouisse, Roland Madar, Michel Pons, Didier Chaussende
• p59 Heavily p-Type Doping of Bulk 6H-SiC and 3C-SiC Grown from Al-Si Melts   [ 1 M ]
  Authors: Frédéric Mercier, Irina G. Galben-Sandulache, Maya Marinova, Georgios Zoulis, Thierry Ouisse, Efstathios K. Polychroniadis, Didier Chaussende
• p63 Improvements of the Continuous Feed-Physical Vapor Transport Technique (CF-PVT) for the Seeded Growth of 3C-SiC Crystals   [ 5 M ]
  Authors: Guoli L. Sun, Irina G. Galben-Sandulache, Thierry Ouisse, Jean Marc Dedulle, Michel Pons, Roland Madar, Didier Chaussende
• p67 Is the Liquid Phase a Viable Approach for Bulk Growth of 3C-SiC?   [ 553 K ]
  Authors: Frédéric Mercier, Olivier Kim-Hak, Jean Lorenzzi, Jean Marc Dedulle, Gabriel Ferro, Didier Chaussende
• p71 The Effect of Phenol Resin Types and Mixing Ratios on the Synthesis of High-Purity β-SiC Powder by the Sol-Gel Method   [ 1 M ]
  Authors: Yun Ki Byeun, Rainer Telle, Kyong Sop Han, Sang Whan Park
• p77 Low-Pressure Fast Growth and Characterization of 4H-SiC Epilayers   [ 619 K ]
  Authors: Hidekazu Tsuchida, Masahiko Ito, Isaho Kamata, Masahiro Nagano, Tetsuya Miyazawa, Notihiro Hoshino
• p83 Growth and Properties of SiC On-Axis Homoepitaxial Layers   [ 4 M ]
  Authors: Jawad Hassan, J. Peber Bergman, Justinas Palisaitis, Anne Henry, Patrick J. McNally, S. Anderson, Erik Janzén
• p89 High-Performance Multi-Wafer SiC Epitaxy – First Results of Using a 10x100mm Reactor   [ 603 K ]
  Authors: Christian Hecht, René A. Stein, Bernd Thomas, Larissa Wehrhahn-Kilian, Jonas Rosberg, Hiroya Kitahata, Frank Wischmeyer
• p95 Concentrated Chloride-Based Epitaxial Growth of 4H-SiC   [ 276 K ]
  Authors: Anne Henry, Stefano Leone, Sven Andersson, Olof Kordina, Erik Janzén
• p99 4H-SiC Homoepitaxial Growth on Vicinal-Off Angled Si-Face Substrate   [ 3 M ]
  Authors: Kazutoshi Kojima, Sachiko Ito, Junji Senzaki, Hajime Okumura
• p103 Epitaxial Growth of 4H-SiC with High Growth Rate Using CH₃Cl and SiCl₄ Chlorinated Growth Precursors   [ 384 K ]
  Authors: Siva Prasad Kotamraju, Bharat Krishnan, Yaroslav Koshka
• p107 Chloride-Based CVD at High Growth Rates on 3” Vicinal Off-Angles SiC Wafers   [ 351 K ]
  Authors: Stefano Leone, Anne Henry, Olof Kordina, Erik Janzén
• p111 Use of SiCl₄ as Silicon Precursor for Low-Temperature Halo-Carbon Epitaxial Growth of 4H-SiC   [ 275 K ]
  Authors: Siva Prasad Kotamraju, Bharat Krishnan, Galyna Melnychuk, Yaroslav Koshka
• p115 Short-Length Step Morphology on 4° Off Si-Face Epitaxial Surface Grown on 4H-SiC Substrate   [ 559 K ]
  Authors: Kenji Momose, Michiya Odawara, Yutaka Tajima, Hiroo Koizumi, Daisuke Muto, Takayuki Sato
• p119 Improvement of Surface Roughness for 4H-SiC Epilayers Grown on 4° Off-Axis Substrates   [ 485 K ]
  Authors: Takashi Aigo, Hiroshi Tsuge, Hirokatsu Yashiro, Tatsuo Fujimoto, Masakazu Katsuno, Masashi Nakabayashi, Taizo Hoshino, Wataru Ohashi