Silicon Carbide and Related Materials 2010
| Paper Title | Page |
|---|---|
|
|
|
|
Enlargement Growth of Large 4H-SiC Bulk Single Crystal Authors: Tomohisa Kato, Tomonori Miura, Ichiro Nagai, Hiroyoshi Taniguchi, Hideaki Kawashima, Tetsuya Ozawa, Kazuo Arai, Hajime Okumura |
3 |
|
Reducing Stacking Faults in Highly Doped N-Type 4H-SiC Crystal Authors: Kazutoshi Kojima, Tomohisa Kato, Sachiko Ito, Jun Kojima, Fusao Hirose, Yasuo Kito, Shoichi Yamauchi, Koichi Nishikawa, Ayumu Adachi |
8 |
|
On Application of Sublimation Epitaxy to Growth of Bulk 3C-SiC Crystals Authors: Alexander A. Lebedev, Pavel L. Abramov, A.S. Zubrilov, Elena V. Bogdanova, Sergey P. Lebedev, Natasha V. Seredova, Alla S. Tregubova |
12 |
|
Experimental Verification of a Novel System for the Growth of SiC Single Crystals Authors: Krzysztof Grasza, Emil Tymicki, Katarzyna Racka, Marek Orzyłowski |
16 |
|
Quality Investigation of 3C-SiC Crystals Grown by CF-PVT Technique Authors: Irina G. Galben-Sandulache, Maya Marinova, Alkyoni Mantzari, Guoli L. Sun, Ariadne Andreadou, Didier Chaussende, Efstathios K. Polychroniadis |
20 |
|
Polytype Stability of 4H-SiC Seed Crystal on Solution Growth Authors: Alexander, Kazuaki Seki, Shigeta Kozawa, Yuji Yamamoto, Toru Ujihara, Yoshikazu Takeda |
24 |
|
Authors: Shigeta Kozawa, Kazuaki Seki, Alexander, Yuji Yamamoto, Toru Ujihara, Yoshikazu Takeda |
28 |
|
Effect of Low Frequency Magnetic Field on SiC Solution Growth Authors: Frédéric Mercier, Shinichi Nishizawa |
32 |
|
Crystal Growth of 4H-SiC on 6H-SiC by Traveling Solvent Method Authors: Kazuhiko Kusunoki, Kazuhito Kamei, Nobuyoshi Yashiro, Koji Moriguchi, Nobuhiro Okada |
36 |
