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Gettering and Defect Engineering in Semiconductor Technology XI

Solid State Phenomena Volumes 108 - 109

• Papers
• Abstracts

• p91 µ-Raman Investigations on Hydrogen Gettering in Hydrogen Implanted and Hydrogen Plasma Treated Czochralski Silicon   [ 272 K ]
  Authors: Wolfgang Düngen, Reinhart Job, Yue Ma, Yue Long Huang, Wolfgang R. Fahrner, L.O. Keller, J.T. Horstmann
• p97 Morphological Transformation of Oxide Particles and Thresholds for Effective Gettering in Silicon   [ 155 K ]
  Authors: Robert J. Falster, Vladimir V. Voronkov, V.Y. Resnick, M.G. Mil'vidskii
• p103 Effect of Oxygen Precipitates on the Surface-Precipitation of Nickel on Cz-Silicon Wafers   [ 151 K ]
  Authors: Kozo Nakamura, Junsuke Tomioka
• p109 Electrical Properties of Clustered and Precipitated Iron in Silicon   [ 1 M ]
  Authors: R. Khalil, Vitaly V. Kveder, Wolfgang Schröter, Michael Seibt
• p115 Gettering Mechanism of Cu in Silicon Calculated from First Principles   [ 334 K ]
  Authors: Kazuhito Matsukawa, Nobusuke Hattori, Shigeto Maegawa, Koun Shirai, Hiroshi Katayama-Yoshida
• p125 Energetics and Kinetics of Defects and Impurities in Silicon from Atomistic Calculations   [ 33 M ]
  Authors: Wolfgang Windl
• p133 Microscopic Mechanisms of Cobalt Disilicide Nucleation in Silicon   [ 975 K ]
  Authors: V.A. Borodin, M.O. Ruault, Mariya G. Ganchenkova, F. Fortuna
• p139 The Influence of Nitrogen on Dislocation Locking in Float-Zone Silicon   [ 170 K ]
  Authors: John D. Murphy, A. Giannattasio, Charles R. Alpass, Semih Senkader, Robert J. Falster, Peter R. Wilshaw
• p145 Amorphisation and Recrystallisation of Nanometre Sized Zones in Silicon   [ 928 K ]
  Authors: P.D. Edmondson, S.E. Donnelly, R.C. Birtcher
• p151 Impact of Low Temperature Hydrogenation on Recombination Activity of Dislocations in Silicon   [ 324 K ]
  Authors: O.F. Vyvenko, Martin Kittler, Winfried Seifert
• p157 FTIR Study of Precipitation of Implanted Nitrogen in CZ-Si Annealed under High Hydrostatic Pressure   [ 304 K ]
  Authors: V.D. Akhmetov, Andrzej Misiuk, Hans Richter
• p163 Influence of Magnetic Field on the Unlocking Stress for Dislocation Motion in Cz-Si Depending on Pre-Annealing Time   [ 144 K ]
  Authors: M. Badylevich, Vitaly V. Kveder, Valeri I. Orlov, Yu. Osipyan
• p169 Influence of Neutron Irradiation on Stress - Induced Oxygen Precipitation in Cz-Si   [ 1 M ]
  Authors: Jadwiga Bak-Misiuk, Andrzej Misiuk, Barbara Surma, Artem Shalimov, Charalamos A. Londos
• p175 Ab Initio Studies of Local Vibrations of Small Self-Interstitials Aggregates in Silicon   [ 185 K ]
  Authors: A. Carvalho, R. Jones, João A.P. Coutinho, Vitor J.B. Torres, Patrick R. Briddon
• p181 "New Donors" in Czochralski Grown Silicon Annealed at T≥ 600°C under Compressive Stress   [ 196 K ]
  Authors: Valentin V. Emtsev, Boris A. Andreev, Gagik A. Oganesyan, D.I. Kryzhkov, Andrzej Misiuk, Charalamos A. Londos, M.S. Potsidi