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Gettering and Defect Engineering in Semiconductor Technology XII

Solid State Phenomena Volumes 131 - 133

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• p83 Passivation of Si and SiGe/Si Structures with 1-Octadecene Monolayers   [ 285 K ]
  Authors: I.V. Antonova, M.B. Gulyaev, R.A. Soots, V.A. Seleznev, V.Ya. Prinz
• p89 Configuration of DV Complexes In Ge: Positron Probing of Ion Cores   [ 183 K ]
  Authors: N.Yu. Arutyunov, Valentin V. Emtsev, E. Sayed, Reinhard Krause-Rehberg
• p95 Influence of the Highly-Doped Drain Implantation and the Window Size on Defect Creation in p⁺/n Si_1-XGe_x Source/Drain Junctions   [ 422 K ]
  Authors: M. Kamruzzaman Chowdhury, B. Vissouvanadin, Mireia Bargallo Gonzalez, N. Bhouri, Peter Verheyen, H. Hikavyy, O. Richard, J. Geypen, H. Bender, Roger Loo, C. Claeys, Eddy Simoen, V. Machkaoutsan, P. Tomasini, S.G Thomas, J.P. Lu, J.W. Weijtmans, R. Wise
• p101 Comparison of Defects Created by Plasma-Based Ion Implantation and Conventional Implantation of Hydrogen in Germanium   [ 1 M ]
  Authors: Marie-Laure David, Frédéric Pailloux, Michèl Drouet, Marie France Beaufort, Jean François Barbot, Eddy Simoen, C. Claeys
• p107 Co-Germanide Schottky Contacts on Ge   [ 6 M ]
  Authors: Luc Lajaunie, Marie-Laure David, K. Opsomer, Eddy Simoen, C. Claeys, Jean François Barbot
• p113 Internal Dissolution of Buried Oxide in SOI Wafers   [ 869 K ]
  Authors: Oleg Kononchuk, Francois Boedt, Frederic Allibert
• p119 Degradation and their Recovery Behavior of Irradiated GaAlAs LEDs   [ 176 K ]
  Authors: H. Ohyama, K. Takakura, T. Nagano, M. Hanada, S. Kuboyama, Eddy Simoen, C. Claeys
• p125 Vacancy Clusters in Germanium   [ 264 K ]
  Authors: Anthony R. Peaker, Vladimir P. Markevich, J. Slotte, K. Kuitunen, F. Tuomisto, A. Satta, Eddy Simoen, I. Capan, B. Pivac, R. Jačimović
• p131 Formation of Hydrogen-Related Shallow Donors in Ge_1-xSi_x Crystals Implanted with Protons   [ 209 K ]
  Authors: Yurii M. Pokotilo, Alla N. Petukh, Valentin V. Litvinov, Vladimir P. Markevich, Nikolay V. Abrosimov, Anthony R. Peaker
• p137 Crystallization of InSb Phase Near the Bonding Interface of Silicon-on-Insulator Structure   [ 1 M ]
  Authors: Ida E. Tyschenko, A.G. Cherkov, M. Voelskow, V.P. Popov
• p143 SiGe Heterostructures-on-Insulator Produced by Ge⁺-Ion Implantation and Subsequent Hydrogen Transfer   [ 427 K ]
  Authors: Ida E. Tyschenko, A.G. Cherkov, M. Voelskow, V.P. Popov
• p149 Microwave and Infra Red Light Absorption Studies of Carrier Lifetime in Silicon and Germanium   [ 510 K ]
  Authors: Eugenijus Gaubas, Jan Vanhellemont
• p155 Impact of NiSi₂ Precipitates Electronic Structure on the Minority Carrier Lifetime in n-and p-Type Silicon   [ 395 K ]
  Authors: M.V. Trushin, O.F. Vyvenko, Michael Seibt
• p161 Oxygen Dimers and Related Defects in Plastically Deformed Silicon   [ 24 M ]
  Authors: Nikolai Yarykin
• p167 Enhanced Oxygen Precipitation during the Czochralski Crystal Growth   [ 786 K ]
  Authors: Lukas Válek, Jan Šik, David Lysáček