Main Theme:

Gettering anf Defect Engineering in Semiconductor Technology IX

Volumes 82 - 84
doi: 10.4028/www.scientific.net/SSP.82-84
Paper Titles published in this Main Theme:
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Optical Properties of Oxygen Agglomerates in Silicon

Authors: Simona Binetti, Sergio Pizzini, E. Leoni, R. Somaschini, Antonio Castaldini, Anna Cavallini

75

Positron Annihilation Studies of Oxygen Precipitation in Silicon and of Nano-Precipitates in Si-Rich SiO2 Films: Role of Vacancy-Like Defects

Authors: Roberto S. Brusa, W. Deng, Grzegorz P. Karwasz, Antonio Zecca

81

Silicon Isotope Shifts of the 648-cm-1 Infrared Absorption Line of Oxygen in Silicon

Authors: Hiroshi Yamada-Kaneta

87

Thermal Donors in Silicon Implanted with Rare Earth Impurities

Authors: Valentin V. Emtsev, C.A.J. Ammerlaan, Boris A. Andreev, Gagik A. Oganesyan, D.S. Poloskin, Elena I. Shek, N.A. Sobolev

93

Interfacial Oxygen Thermodonor Formation in Plasma-Hydrogenated Silicon

Authors: G.N. Kamaev, V.V. Bolotov, S.A. Chern'aev, M.D. Efremov

99

Vibrational Modes of Oxygen Dimers in Germanium

Authors: Valentin V. Litvinov, L.I. Murin, J. Lennart Lindström, V.P. Markevich, A.A. Klechko

105

Oxygen Precipitation in Silicon Doped with Tin

Authors: Lyudmila I. Khirunenko, Yu.V. Pomozov, Mikhail G. Sosnin

111

Hydrostatic Pressure Effect on Redistribution of Oxygen Atoms in Oxygen-Implanted Silicon

Authors: Andrzej Misiuk, Adam Barcz, Jacek Ratajczak, I.V. Antonova, J. Jun

115

Elastic Instability of Strained Spherical Precipitates as a Cause of Oxide Platelets in Silicon

Authors: Vladimir V. Voronkov, Robert J. Falster

121

Impact of Hydrogen on Oxygen Precipitation and Gate Oxide Integrity after RTA Processing

Authors: Timo Müller, G. Obermeier, T. Bearda, A. Huber, R. Schmolke, Wilfried von Ammon, Wilfried Lerch

127

Showing 11 to 20 of 128 Paper Titles