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Gettering anf Defect Engineering in Semiconductor Technology IX

Solid State Phenomena Volumes 82 - 84

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• p195 Suppression of Boron Transient Enhanced Diffusion by C Trapping   [ 316 K ]
  Authors: S. Mirabella, A. Coati, S. Scalese, D. De Salvador, S. Pulvirenti, G. Bisognin, E. Napolitani, A. Terrasi, M. Berti, A. Carnera, A.V. Drigo, F. Priolo
• p201 Thermal Evolution of Extrinsic Defects in Ion Implanted Silicon: Current Understanding and Modelling   [ 322 K ]
  Authors: Fuccio Cristiano, B. Colombeau, C. Bonafos, A. Altibelli, G. Benassayag, A. Claverie
• p207 Room Temperature Point Defect Migration in Crystalline Si   [ 382 K ]
  Authors: Sebania Libertino, Salvatore Coffa
• p213 Electrical Effects of Point Defect Clouds at Dislocations in Silicon, Studied by Deep Level Transient Spectroscopy   [ 349 K ]
  Authors: Wolfgang Schröter, Vitaly V. Kveder, Henrik Hedemann
• p219 The Effect of Intrinsic Point Defects upon Dislocation Motion in Silicon   [ 531 K ]
  Authors: I.V. Peidous, K.V. Loiko, D.A. Simpson, W.R. Frensley, Howard R. Huff
• p225 Stress-Induced Redistribution of Point Defects in Silicon Device Structures   [ 378 K ]
  Authors: K.V. Loiko, I.V. Peidous, T.E. Harrington, W.R. Frensley
• p231 Characterization of Interstitial-Related Bulk Defects in p^- Silicon Substrates by Epitaxial Deposition   [ 421 K ]
  Authors: R. Schmolke, W. Angelberger, Wilfried von Ammon, H. Bender
• p237 Monitoring of Defects in Thermal Oxides during Electrical Stress   [ 348 K ]
  Authors: Domenico Caputo, Fernanda Irrera, Fabrizio Palma
• p243 Formation of Shallow Donors in Stress-Annealed Silicon Implanted with High-Energy Ions   [ 253 K ]
  Authors: I.V. Antonova, E.P. Neustroev, Andrzej Misiuk, V.A. Skuratov
• p249 A Study of the Conversion of the VO to the VO₂ Defect in Heat-Treated Silicon under Stress   [ 223 K ]
  Authors: Charalamos A. Londos, M. Potsidou, Andrzej Misiuk, I.V. Antonova
• p255 Passivation of Al/Si Interface by Chemical Treatment: Schottky Barrier Height and Plasma Etch Induced Defects   [ 204 K ]
  Authors: Zsolt E. Horváth, M. Ádám, P. Godio, G. Borionetti, I.A. Szabó, E. Gombia, Vo Van Tuyen
• p259 Impact of Compressive Stress on the Formation of Thermal Donors in Heat-Treated Silicon   [ 253 K ]
  Authors: Andrzej Misiuk, Boris A. Andreev, Valentin V. Emtsev, Charalamos A. Londos, Gagik A. Oganesyan, D.S. Poloskin
• p267 Helium Bubble Growth in Silicon: Ripening or Bubble Motion and Coalescence?   [ 296 K ]
  Authors: V.M. Vishnyakov, S.E. Donnelly, G. Carter, R.C. Birtcher, L. Haworth
• p273 Void Shrinkage during Thermal Oxidation of Silicon   [ 428 K ]
  Authors: Vito Raineri, Stella Giuffrida, Emanuele Rimini
• p279 Gettering Induced by Helium Implantation: Application to a Device   [ 466 K ]
  Authors: F. Roqueta, Daniel Alquier, Laurent Ventura, B. Lopez