Fabrication of a Peltier Device Based on InSb and SbTe Thin Films
We fabricated a thin film Peltier device based on an InSb film and a SbTe film. N-type InSb thin films were grown on sapphire (0001) substrate with InAsSb buffer layer by metalorganic vapor phase epitaxy, and P-type SbTe thin films were deposited on the substrate by electron beam evaporation. N-type and P-type films were separated on the substrate, and between them, a Au thin film was deposited by direct-current sputtering. We observed partial Peltier effect in the device.
Lynn Khine and Julius M. Tsai
T. Ishii et al., "Fabrication of a Peltier Device Based on InSb and SbTe Thin Films", Advanced Materials Research, Vol. 254, pp. 50-53, 2011