Fabrication of a Peltier Device Based on InSb and SbTe Thin Films

Abstract:

We fabricated a thin film Peltier device based on an InSb film and a SbTe film. N-type InSb thin films were grown on sapphire (0001) substrate with InAsSb buffer layer by metalorganic vapor phase epitaxy, and P-type SbTe thin films were deposited on the substrate by electron beam evaporation. N-type and P-type films were separated on the substrate, and between them, a Au thin film was deposited by direct-current sputtering. We observed partial Peltier effect in the device.

• Periodical: Advanced Materials Research (Volume 254)
• Pages: 50-53
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.254.50
• Online since: May 2011
• Authors: Tatsuya Ishii, Hideyuki Homma, Shigeo Yamaguchi
• Keywords: EB, Film, InSb, MOVPE, SbTe, Thermoelectric

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