Fabrication of a Peltier Device Based on InSb and SbTe Thin Films

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We fabricated a thin film Peltier device based on an InSb film and a SbTe film. N-type InSb thin films were grown on sapphire (0001) substrate with InAsSb buffer layer by metalorganic vapor phase epitaxy, and P-type SbTe thin films were deposited on the substrate by electron beam evaporation. N-type and P-type films were separated on the substrate, and between them, a Au thin film was deposited by direct-current sputtering. We observed partial Peltier effect in the device.

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Edited by:

Lynn Khine and Julius M. Tsai

Pages:

50-53

DOI:

10.4028/www.scientific.net/AMR.254.50

Citation:

T. Ishii et al., "Fabrication of a Peltier Device Based on InSb and SbTe Thin Films", Advanced Materials Research, Vol. 254, pp. 50-53, 2011

Online since:

May 2011

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$35.00

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