FBAR Resonators with Sufficient High Q for RF Filter Implementation

Lynn Khine; Lionel Y.L. Wong; Jeffrey B.W. Soon; Ming Lin Julius Tsai

doi:10.4028/www.scientific.net/AMR.254.70

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 254FBAR Resonators with Sufficient High Q for RF...

FBAR Resonators with Sufficient High Q for RF Filter Implementation

Abstract:

Film Bulk Acoustic Wave Resonators (FBAR) at 2.6GHz using AlN piezoelectric material have been fabricated and characterized in this work. A stack of Al bottom electrode, AlN layer and top Al electrode is used to excite the thickness extensional (TE) vibration mode. The FBAR resonator has a quality factor of about 400 and the piezoelectric coupling coefficient of 4.25%, which is critical for RF filter implementation. Moreover, FBAR resonator has been designed to suppress spurious modes in order to ensure higher quality factor. Different filter topologies of ladder/lattice architecture are then explored for effective implementation using several FBAR resonators to build band-pass RF filters.

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Periodical:

Advanced Materials Research (Volume 254)

Pages:

70-73

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.254.70

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Online since:

May 2011

Authors:

Lynn Khine, Lionel Y.L. Wong, Jeffrey B.W. Soon, Ming Lin Julius Tsai

Keywords:

FBAR, Filter, Micromechanical, Piezoelectric Resonator, RF MEMS

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References

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