FBAR Resonators with Sufficient High Q for RF Filter Implementation

Abstract:

Article Preview

Film Bulk Acoustic Wave Resonators (FBAR) at 2.6GHz using AlN piezoelectric material have been fabricated and characterized in this work. A stack of Al bottom electrode, AlN layer and top Al electrode is used to excite the thickness extensional (TE) vibration mode. The FBAR resonator has a quality factor of about 400 and the piezoelectric coupling coefficient of 4.25%, which is critical for RF filter implementation. Moreover, FBAR resonator has been designed to suppress spurious modes in order to ensure higher quality factor. Different filter topologies of ladder/lattice architecture are then explored for effective implementation using several FBAR resonators to build band-pass RF filters.

Info:

Periodical:

Edited by:

Lynn Khine and Julius M. Tsai

Pages:

70-73

DOI:

10.4028/www.scientific.net/AMR.254.70

Citation:

L. Khine et al., "FBAR Resonators with Sufficient High Q for RF Filter Implementation", Advanced Materials Research, Vol. 254, pp. 70-73, 2011

Online since:

May 2011

Export:

Price:

$35.00

In order to see related information, you need to Login.

In order to see related information, you need to Login.