The Nanometer Scaled Defects Induces with the Dislocation Motion in II-VI Insulated Semiconductors

V.N. Babentsov; V.A. Boyko; A.F. Kolomys; G.A. Shepelski; V.V. Strelchuk; N.I. Tarbaev

doi:10.4028/www.scientific.net/AMR.276.195

Paper Titles

On-Chip Tensile Testing of the Mechanical and Electro-Mechanical Properties of Nano-Scale Silicon Free-Standing Beams
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Non-Standard FinFET Devices for Small Volume Sample Sensors
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3D SOI Elements for System-on-Chip Applications
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Routes towards Novel Active Pressure Sensors in SOI Technology
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Photovoltage Performance of Ge/Si Nanostructures Grown on Intermediate Ultrathin SiO_X Layers
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Interface and Bulk Properties of High-K Gadolinium and Neodymium Oxides on Silicon
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Effect of Ge Nanoislands on Lateral Photoconductivity of Ge-SiO_X-Si Structures
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A Model of the Evolution of the Au/Si Droplet Ensembles during Rapid Thermal Annealing at High Temperatures
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The Nanometer Scaled Defects Induces with the Dislocation Motion in II-VI Insulated Semiconductors
p.195

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The Nanometer Scaled Defects Induces with the Dislocation Motion in II-VI Insulated Semiconductors

Abstract:

Dislocation-related defects induced by dislocation motion in p-CdTe were studied. Generation of “fresh” dislocations from the indented point of the CdTe (100), (110), and (111) surfaces at room temperatures was visualized by the chemical etching and low temperature photoluminescence in a mapping regime. The crystallographic orientation of the dislocation rosettes of macroscopic plastic deformation lines was analyzed on the (100), (110), and (111) surfaces.