The Nanometer Scaled Defects Induces with the Dislocation Motion in II-VI Insulated Semiconductors

Abstract:

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Dislocation-related defects induced by dislocation motion in p-CdTe were studied. Generation of “fresh” dislocations from the indented point of the CdTe (100), (110), and (111) surfaces at room temperatures was visualized by the chemical etching and low temperature photoluminescence in a mapping regime. The crystallographic orientation of the dislocation rosettes of macroscopic plastic deformation lines was analyzed on the (100), (110), and (111) surfaces.

Info:

Periodical:

Edited by:

Alexei N. Nazarov and Jean-Pierre Raskin

Pages:

195-202

DOI:

10.4028/www.scientific.net/AMR.276.195

Citation:

V.N. Babentsov et al., "The Nanometer Scaled Defects Induces with the Dislocation Motion in II-VI Insulated Semiconductors", Advanced Materials Research, Vol. 276, pp. 195-202, 2011

Online since:

July 2011

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$35.00

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