Diffusion in Materials - DIMAT2004
Paper Title Page
Abstract: The diffusion coefficient of In in TiAl has been measured using ion implantation technique and secondary ion mass spectrometry. The...
Abstract: Ultra-strong gravitational field (Mega-gravity field) causes the sedimentation of even atoms (diffusion), and is expected to create a...
Abstract: We present a unified simulation of diffusion in silicon (Si) and silicon dioxide (SiO2) that is based on the diffusing dopant species and...