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Electrical Behaviour of MoS2 Based Staggered Heterostructure under Magnetic Field

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Abstract:

Heterostructures are important for various electrical, optical, and magneto-transport applications. In the present work, MoS2/ZnO heterostructures are successfully grown by magnetron sputtering followed by annealing of ZnO thin films. After annealing, ZnO is again coated with Mo by using the same technique. ZnO-Mo stack is further sulfurized to convert Mo into MoS2. X-ray diffraction (XRD) showed the structural analysis of ZnO, MoS2, and MoS2/ZnO heterostructures with polycrystalline nature. Scanning electron microscopy (SEM) also supports the granular morphology of ZnO, MoS2, and MoS2/ZnO films. Energy dispersive X-ray analysis (EDX) confirms the presence of necessary elements i.e., Zn, Mo, S, O, and Si. Further, the impact of the magnetic field on the current-voltage (I-V) behavior of MoS2/ZnO heterostructures, reveals insights into their magneto-resistive capabilities.

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Journal of Nano Research Vol. 90 View Preview

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Journal of Nano Research (Volume 90)

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1-14

DOI:

https://doi.org/10.4028/p-JGmMB9

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Online since:

December 2025

Authors:

Muhammad Talha, Shumaila Karamat*, Faisal Nasim, Rizwan Akram, Shabeya Kanwal, Uzma Khalique

Keywords:

Granular Morphology, Heterostructure, I-V Curves, Magnetron Sputtering, Sulphurization

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© 2025 Trans Tech Publications Ltd. All Rights Reserved

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