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Photoresponse Amplification of Silicon Carbide Ultraviolet Photodetector via In Situ Nitrogen Doping

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Abstract:

High-performance ultraviolet photodetectors require high sensitivity, fast response, strong radiation resistance, and high on/off ratio. This study investigates the impact of in-situ nitrogen doping on the performance of Silicon Carbide ultraviolet photodetectors (SiC-UVPDs). The SiC-UVPD devices demonstrated high sensitivity, fast response, low dark current, and good stability. Notably, the sensitivity of the devices increased with higher nitrogen doping, reaching 1.94 × 10⁵ % for the 8-sccm nitrogen-doped SiC-UVPD under 254 nm UV light illumination at 20 V - a 51% improvement compared to undoped SiC-UVPDs. Furthermore, nitrogen doping did not compromise the devices' response speed. Consequently, the combination of high sensitivity, fast response, low-cost fabrication, and robust radiation resistance positions SiC-UVPDs as promising candidates for high-performance ultraviolet photodetectors, particularly in harsh environment applications.

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Journal of Nano Research Vol. 90 View Preview

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Periodical:

Journal of Nano Research (Volume 90)

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47-57

DOI:

https://doi.org/10.4028/p-0o6xzN

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Online since:

December 2025

Authors:

Kasif Teker*

Keywords:

High Sensitivity, Nitrogen Doping, Optoelectronic Devices, Photoresponse Enhancement, Silicon Carbide, Ultraviolet Photodetectors

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© 2025 Trans Tech Publications Ltd. All Rights Reserved

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