Preface
Design Parameters Impact on Electrical Characteristics of 4H-SiC Thyristors with Etched Junction Termination Extension
p.1
p.1
SiC MOSFETs C-V Capacitance Curves with Negative Biased Drain
p.9
p.9
TCAD Modelling of Anisotropic Channel Mobility in 4H-SiC MOSFETs
p.15
p.15
On the Characterization of 4H-SiC PiN Diodes and JFETs for their Use in High-Voltage Bidirectional Power Devices
p.21
p.21
The 3rd Quadrant Operation of 4th Generation SiC MOSFETs: Recovery Charge & Bipolar Degradation
p.29
p.29
Optimizing 1.2 kV SiC Trench MOSFETs for Enhanced Performance and Manufacturing Efficiency
p.37
p.37
Novel SiC MOSFET Edge-Termination Structure for Electric Field Relaxation Using an Oxide Film along the Trench Surface
p.45
p.45
SiC Schottky-Barrier Diode without Ion-Implanted P-Type Regions
p.53
p.53
Preface
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Key Engineering Materials (Volume 1022)
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September 2025
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