On the Characterization of 4H-SiC PiN Diodes and JFETs for their Use in High-Voltage Bidirectional Power Devices

Arne Benjamin Renz; Yifan Jiang; Peter Michael Gammon; Erfan Bashar; Jiankang Bu

doi:10.4028/p-Fg79mF

Paper Titles

Design Parameters Impact on Electrical Characteristics of 4H-SiC Thyristors with Etched Junction Termination Extension
p.1

SiC MOSFETs C-V Capacitance Curves with Negative Biased Drain
p.9

TCAD Modelling of Anisotropic Channel Mobility in 4H-SiC MOSFETs
p.15

On the Characterization of 4H-SiC PiN Diodes and JFETs for their Use in High-Voltage Bidirectional Power Devices
p.21

The 3^rd Quadrant Operation of 4^th Generation SiC MOSFETs: Recovery Charge & Bipolar Degradation
p.29

Optimizing 1.2 kV SiC Trench MOSFETs for Enhanced Performance and Manufacturing Efficiency
p.37

Novel SiC MOSFET Edge-Termination Structure for Electric Field Relaxation Using an Oxide Film along the Trench Surface
p.45

SiC Schottky-Barrier Diode without Ion-Implanted P-Type Regions
p.53

HomeKey Engineering MaterialsKey Engineering Materials Vol. 1022On the Characterization of 4H-SiC PiN Diodes and...

On the Characterization of 4H-SiC PiN Diodes and JFETs for their Use in High-Voltage Bidirectional Power Devices

Abstract:

Power electronics are a key enabling technology in the process towards a fully electrified society. Modern power conversion is integral in delivering efficient electric vehicles (EVs) and their fast charging stations, advanced motor drives and the integration of renewable energy into a modern grid. With an EV market share of 50% targeted by the US Government and the fact that about 50 % of all electricity is used to power and drive electric motors, it becomes evident that efficiency of power electronics systems will be at the center of any policy that wants to steer society towards a more sustainable energy economy.

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Characteristics Evaluation and Device Design

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Periodical:

Key Engineering Materials (Volume 1022)

Pages:

21-28

DOI:

https://doi.org/10.4028/p-Fg79mF

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Cite this paper

Online since:

September 2025

Authors:

Arne Benjamin Renz*, Yifan Jiang, Peter Michael Gammon, Erfan Bashar, Jiankang Bu

Keywords:

4H-Silicon Carbide (SiC), Bidirectional Power Switches, BTRAN™, Field-Effect Transistors (FETs), Lifetime Enhancement

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* - Corresponding Author

References

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