The 3rd Quadrant Operation of 4th Generation SiC MOSFETs: Recovery Charge &amp; Bipolar Degradation

Yisi Liu; Saeed Jahdi; Mana Hosseinzadehlish; Ian Laird; Phil Mellor; Konstantinos Floros; Ingo Lüdtke

doi:10.4028/p-Y4W1rg

Paper Titles

Design Parameters Impact on Electrical Characteristics of 4H-SiC Thyristors with Etched Junction Termination Extension
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SiC MOSFETs C-V Capacitance Curves with Negative Biased Drain
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TCAD Modelling of Anisotropic Channel Mobility in 4H-SiC MOSFETs
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On the Characterization of 4H-SiC PiN Diodes and JFETs for their Use in High-Voltage Bidirectional Power Devices
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The 3^rd Quadrant Operation of 4^th Generation SiC MOSFETs: Recovery Charge & Bipolar Degradation
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Optimizing 1.2 kV SiC Trench MOSFETs for Enhanced Performance and Manufacturing Efficiency
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Novel SiC MOSFET Edge-Termination Structure for Electric Field Relaxation Using an Oxide Film along the Trench Surface
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HomeKey Engineering MaterialsKey Engineering Materials Vol. 1022The 3rd Quadrant Operation of 4th Generation SiC...

The 3^rd Quadrant Operation of 4^th Generation SiC MOSFETs: Recovery Charge & Bipolar Degradation

Abstract:

In this paper, the performance in 3^rd quadrant operation of 3^rd and 4^th generation SiC power MOSFETs have been evaluated. These are the Gen-3 1.2 kV & 18 A Planar SiC MOSFET, Gen-3 1.2 kV & 19 A Asymmetrical Trench SiC MOSFET, Gen-4 1.2 kV & 26 A Symmetrical Double-Trench SiC MOSFET and Gen-4 1.2 kV & 19 A Trench-Assisted Planar SiC MOSFET. Further, the transients of early-stage degradation development are investigated by conducting continuous stress current thorough body diode of the aforementioned devices to explore the extent of degradation in the body diodes of SiC MOSFETs. These devices are compared to provide a better understanding of the impact of different structures.

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Periodical:

Key Engineering Materials (Volume 1022)

Pages:

29-36

DOI:

https://doi.org/10.4028/p-Y4W1rg

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Online since:

September 2025

Authors:

Yisi Liu, Saeed Jahdi*, Mana Hosseinzadehlish, Ian Laird, Phil Mellor, Konstantinos Floros, Ingo Lüdtke

Keywords:

3^rd Quadrant, Bipolar Degradation, Body Diode, MOSFET, Trench

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Creative Commons CC BY 4.0

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* - Corresponding Author

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