TCAD Modelling of Anisotropic Channel Mobility in 4H-SiC MOSFETs

Hemant Dixit; Daniel J. Lichtenwalner; Andreas Scholze; Sei Hyung Ryu

doi:10.4028/p-UdUGq3

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HomeKey Engineering MaterialsKey Engineering Materials Vol. 1022TCAD Modelling of Anisotropic Channel Mobility in...

TCAD Modelling of Anisotropic Channel Mobility in 4H-SiC MOSFETs

Abstract:

Channel mobility is one of the most critical parameters in 4H-SiC based Power MOSFETs and contributes a significant fraction of device on-state resistance. Experimentally, it has been shown that the a-face channel mobility is much higher compared to the Si-face, making a-face a very attractive option for a wide range of applications in the power electronics market. However, modelling of the a-face channel mobility using Technology Computer Aided Design tools is not well established due to the complex nature of channel mobility due to a variety of scattering mechanisms involved. In this paper, we present a well calibrated a-face channel mobility model that shows an excellent match with the available experimental data and further provides critical insights into the anisotropic nature of channel mobility in 4H-SiC MOSFET structures.

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Periodical:

Key Engineering Materials (Volume 1022)

Pages:

15-19

DOI:

https://doi.org/10.4028/p-UdUGq3

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Online since:

September 2025

Authors:

Hemant Dixit*, Daniel J. Lichtenwalner, Andreas Scholze, Sei Hyung Ryu

Keywords:

A-Face, Lateral MOSFET, Mobility Model, TCAD

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* - Corresponding Author

References

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