Novel SiC MOSFET Edge-Termination Structure for Electric Field Relaxation Using an Oxide Film along the Trench Surface

Yoshitaka Kimura; Takaaki Tominaga; Yutaka Fukui; Akifumi Iijima; Kohei Adachi; Fumitoshi Yamamoto; Yasuhiro Kagawa; Kazushi Kono

doi:10.4028/p-6st6Ux

Paper Titles

TCAD Modelling of Anisotropic Channel Mobility in 4H-SiC MOSFETs
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On the Characterization of 4H-SiC PiN Diodes and JFETs for their Use in High-Voltage Bidirectional Power Devices
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The 3^rd Quadrant Operation of 4^th Generation SiC MOSFETs: Recovery Charge & Bipolar Degradation
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Optimizing 1.2 kV SiC Trench MOSFETs for Enhanced Performance and Manufacturing Efficiency
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Novel SiC MOSFET Edge-Termination Structure for Electric Field Relaxation Using an Oxide Film along the Trench Surface
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SiC Schottky-Barrier Diode without Ion-Implanted P-Type Regions
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Three Level Pulses to Investigate Gate Switching Instability
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DFT Calculations on the Termination of 4H-SiC Non-Polar Surfaces during Photoelectrochemical Pore Formation
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TCAD Model Parameter Calibration Strategy for 1200V SiC MOSFET
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HomeKey Engineering MaterialsKey Engineering Materials Vol. 1022Novel SiC MOSFET Edge-Termination Structure for...

Novel SiC MOSFET Edge-Termination Structure for Electric Field Relaxation Using an Oxide Film along the Trench Surface

Abstract:

In this study, we investigated a trench-gate silicon carbide metal-oxide-semiconductor field-effect transistor (SiC-MOSFET) edge-termination structure using an oxide film along the trench surface to simplify the manufacturing process. The trench structure in the termination region serves as a guard ring, eliminating the need for a separate guard ring process and thereby reducing the number of process steps. To suppress electric field concentration at the edge of the cell region under high voltage, a boundary region between the cell and termination regions was implemented. Technology Computer-Aided Design (TCAD) device simulations confirmed that by using the boundary region and narrowing the mesa width, avalanche breakdown was prevented up to the breakdown voltage of the cell region.

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Periodical:

Key Engineering Materials (Volume 1022)

Pages:

45-51

DOI:

https://doi.org/10.4028/p-6st6Ux

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Online since:

September 2025

Authors:

Yoshitaka Kimura*, Takaaki Tominaga, Yutaka Fukui, Akifumi Iijima, Kohei Adachi, Fumitoshi Yamamoto, Yasuhiro Kagawa, Kazushi Kono

Keywords:

Bottom Oxide Protection, Edge-Termination, Guard Ring, MOSFET, Silicon Carbide, Trench-Gate

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* - Corresponding Author

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