TCAD Model Parameter Calibration Strategy for 1200V SiC MOSFET

Abstract:

We present an accurate calibration strategy for TCAD model parameters of a 1200V vertical Silicon-Carbide (SiC) MOSFET, considering key physical characteristics of SiC such as trap distribution along the SiC/SiO₂ interface, mobility degradation, and Schottky contact for the p-type region. Initially, static characteristics are used to calibrate the SiC/SiO₂ interface traps and mobility model parameters in the low electric field region after matching the simulated doping profile with SIMS. Subsequently, capacitance-voltage (C-V) characteristics are calibrated by considering both the capacitance in periphery and the Schottky effect for the p-type well (PWell) region. Finally, the calibrated model was used to evaluate SC withstand time using mixed-mode TCAD simulation. The simulated static and dynamic performance, including short-circuit (SC) withstand time, are in good agreement to the measurements with an error rate of less than 10%. In summary, we propose a TCAD model parameter calibration method for highly accurate simulation of 1200V vertical SiC MOSFETs, which will contribute to finding process and design solutions that consider both static and dynamic characteristics.

• Periodical: Key Engineering Materials (Volume 1022)
• Pages: 77-82
• DOI: https://doi.org/10.4028/p-6pxJ5v
• Online since: September 2025
• Authors: Jieun Lee*, Jong Min Kim, Seung Hyun Kim, Hee Bae Lee, Young Chul Kim, Hyun Chul Nah
• Keywords: Calibration, Model Parameter, Short-Circuit, SiC Power MOSFET, TCAD Simulation

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