Key Engineering Materials
Vols. 375-376
Vols. 375-376
Key Engineering Materials
Vols. 373-374
Vols. 373-374
Key Engineering Materials
Vols. 368-372
Vols. 368-372
Key Engineering Materials
Vol. 367
Vol. 367
Key Engineering Materials
Vols. 364-366
Vols. 364-366
Key Engineering Materials
Vols. 361-363
Vols. 361-363
Key Engineering Materials
Vols. 359-360
Vols. 359-360
Key Engineering Materials
Vols. 353-358
Vols. 353-358
Key Engineering Materials
Vol. 352
Vol. 352
Key Engineering Materials
Vol. 351
Vol. 351
Key Engineering Materials
Vol. 350
Vol. 350
Key Engineering Materials
Vols. 348-349
Vols. 348-349
Key Engineering Materials
Vol. 347
Vol. 347
Key Engineering Materials Vols. 359-360
Paper Title Page
Abstract: In this paper, we emphasize that residual stresses in a ground surface are primarily
generated due to grinding zone temperature effect, and discuss grinding zone temperature can be
debased based on characteristics of the thin vitrified bond CBN wheel and quick-point grinding. Via
experimental results of 5 group working procedures, we find that surface roughness Ra showed a
tendency to reduce slightly with infeed rate reduced, cut depth increased, grinding wheel speed and
grinding variable angle increased, the favorable residual compressive stress could obtained along
with variables angle(α, β) increased, the sub-surface white etching layer and tempered martensite
layer in size become thinner with α, β angle and grinding wheel speed increased when removal rate
Z=0.06mm3/mm keep constant in quick-point grinding, by contraries, surface quality were
decreased entirely when variables angle(α, β) equal to zero. The results indicate it is important that
grinding variable angle were choice in quick-point grinding for to obtain favorable residual
compressive stress.
239
Abstract: The surface integrity finished by abrasive jet with grinding wheel as restraint was
experimentally investigated. Experiments were performed with plane grinder M7120 equiped with
abrasive jet finishing device and harded workpiece material 45 steel which was ground with the
surface roughness values of Ra=0.6μm.The machined surface morphology was studied using
Scanning Electron Microscope (SEM) and microscope and microcosmic geometry parameters were
measured with TALYSURF5 instrument. The surface hardness for ground and finished surface was
measured with HVS-1000 instrument and the phase structure was analyzed by X-ray energy
dispersive spectram and residual stresses were measured by PW3208 X-ray diffraction. The Results
show that longitudinal geometry parameter values were diminished and ripple was obviously
improved comparing with ground surface. Furthermore, the finished surface has condensible
residual stresses and high surface hardness comparability compared to grinding machining surface.
As a result, life and precision consistency of finished workpiece were improved.
244
Abstract: Molecular dynamics is a rapidly developing field of science and has become an established
tool for studying the dynamic behavior of material machining. A three-dimensional molecular
dynamics (MD) model about the atoms of the diamond cutting tools and the diamond grits is built by
using the molecular dynamics. The Tersoff potential function is used to calculate the force and potential
energy among the atoms of the diamond tools and the atoms of the diamond grits. The lapping
processes at a special cutting depth are simulated. The variety of the specimen potential energy in the
lapping process is observed. The mechanism of the diamond micro machining and the form of the
surface formation are given by comparing the distribution maps of atoms in initial and cutting states.
This study will give a strong support to the diamond cutting tools’ lapping.
249
Abstract: Right getting hold of the contact form between the wafer and the pad is the precondition of
fully understanding the material removal mechanism in wafer chemical mechanical polishing (CMP)
process. In this paper, according to friction and abrasion theory, the differentiating method of contact
form between the wafer and the pad has been obtained firstly. Then, the material removal rate (MRR)
produced by mechanical action, chemical action and their interaction has been achieved by test results
of MRR. According to analysis on test results of MRR, it is concluded that the mechanical action
produced by abrasives is the main mechanical action, the MRR produced by the interaction between
the mechanical action of abrasives and chemical action of slurry is the main MRR and the contact
form between the wafer and the pad is solid-solid contact in wafer CMP. These results will provide
theoretical guide to further understand the material removal mechanism of in wafer CMP.
254
Abstract: In order to elevate the efficiency of the surface finish to reach the fast improvement of the
surface roughness of the workpiece, so as to reduce the residual stress on the surface efficiently. The
present study discusses the surface after traditional machining, of which the plane surface used a
design of finish tool includes an electrode and a nonconductive grinding wheel to execute the
synchronous process of grinding and electrochemical finishing. The electrode form and the
machining process are obviously different from electrochemical grinding (ECG). In the experiment,
the design electrode is used with continuous and pulsed direct current. The controlled factors
include die material, and chemical composition and concentration of the electrolyte. The
experimental parameters are flow rate of electrolytes, position of plate electrode, electrode
thickness, electrode rotational speed, electrical current rating, feed rate of workpiece, and pulsed
period. The experimental results show that the supply of current rating is near concern with the
position and thickness of the plate electrode. The use of large electrolytic flow rate and thick
electrode is advantageous to the finish effect. High rotational speed of finish tool produces better
polishing. The finishing effect is better with longer off-time because discharge of polishing dregs
becomes easier. Higher current rating with quicker workpiece feed rate effectively reaches the fast
improvement of the surface roughness of the workpiece is recommend in current study.
259
Abstract: The average Reynolds equation and average clearance equation of circular translational
polishing (CTP) under the quasi-stable mixed lubrication state are set up in polar coordinates. The
distributions of fluid pressure and contact pressure during polishing are numerically analyzed by
solving simultaneously these equations along with the contact pressure equation. The effects of
various process parameters on hydrodynamic performance of CTP are analyzed. By comparing the
distributions of periodic average pressure along radial direction under fully and partially lubricated
states, we conclude that carefully controlled CTP under mixed lubrication is beneficial to improving
the surface quality and planarity of the wafer.
264
Abstract: Nanomachining tests have been conducted on single-crystal Al using atomic force
microscope to simulate single-blade machining process of single gain. The influences of
nanomachining experimental parameters (lateral feed and velocity) on the properties of engineering
surface, material removal and chip formation were studied. Results indicated that the cutting depth
of nanomachined surface increased as the lateral feed decreased. Insensitivity of cutting depth to
velocity at same normal load was revealed. The different chip behaviors of nanomachined surface
were investigated through scanning electron microscope (SEM). Results indicated that different
lateral feeds caused different chip behaviors. Three typical chip behaviors were characterized as the
lateral feed increased. In addition, the chip behavior and the volume of material removed were
observed having no evident linear transformation with the evolution of the velocity by SEM
graphics. Furthermore, it was concluded from the chip behaviors in nanomachining process that the
material at high loads was removed by plastic deformation with no fracture or crack happened.
269
Abstract: The application of hard and brittle materials become wider and wider because its
self-characteristics. It is used widely in finish machining of products, such as memory record device,
information products, precision instrument, etc. Traditional grinding-polishing methods have not
suited for precision machining requirements of hard and brittle materials. Carbide and ceramic are
chosen as workpiece. Diamond polishing film is chosen as polishing tool. Polishing experiments are
done by using self-made film polishing machine with high speed and cooling inside. Polishing
mechanism and polishing technology of what polishing film polishes hard and brittle materials will
be studied by changing polishing speed and diamond grain size and so on. The experimental study
of wear shape of gringding grain, desquamation process of grain and surface quality of workpiece
will be done in this paper so that the reasonable technology of polishing hard and brittle materials
with high productivity is obtained. It enrich and perfect the ultra-precision machining theory. A new
method of ultra-precision lapping and polishing of hard and brittle materials is provided.
274
Abstract: In this paper, a newly developed ultra-fine abrasive polishing pad by gel technology was
adopted to polish silicon wafer on a nano-polishing machine. In order to evaluate the machining
performances of the polishing pad, the influences of abrasive sizes, abrasive concentration and
polishing parameters (pressure, rotating speed and machining time) on the silicon wafer were
investigated respectively. Optical microscope and ZYGO 3D surface analyzer were applied to
examine the surface morphologies and surface roughness of the polished silicon wafer respectively.
The experimental results showed that the surface roughness of silicon wafer decreased with the
decreasing of abrasive grits and the increasing of abrasive concentration and polishing parameters
(pressure, rotating speed and polishing time) when polishing silicon wafer with the polishing pad
containing Al2O3 abrasive. When abrasive concentration, polishing pressure and polishing time
reached certain values, few changes would happen for the silicon wafer.
279
Abstract: In the present work, high power DC arc plasma jet chemical vapor deposition (CVD) is
used to prepare diamond films with full width half magnitude (FWHM) less than 10 wave numbers
at 1332 cm−1 Raman peak. During the polishing process, diamond film is hold against the stainless
steel holder, which rotates and swings when the sample comes into contact with the cast-iron plate.
Average surface roughness of the forming nucleus polished surface and growing polished surface is
560nm, 90nm respectively. And the materials removal rate is quite different. Fine crystal grain of
the forming nucleus surface and the thick column crystal of growing surface are dominant in
structure. In the meantime, effects of the size of the abrasive power, the applied force and polishing
direction are also discussed. A profilometer, an Raman spectroscopy, X-ray diffraction and a
scanning electron microscope have been used to evaluate the surface states of diamond films before
and after polishing. This result reveals an. improvement of polishing efficiency and a great potential
for commercial application.
285