Chip-Top Packaging Technology for SiC Devices Operational at 250°C with Power-Cycling Durability of over 300,000 Cycles

So Tanaka; Jiro Shinkai; Masato Ikegawa; Fumiki Kato; Hiroshi Sato; Hiromi Kurashima; Yasuki Mikamura

doi:10.4028/p-9193mf

Paper Titles

Bias-Induced Instability of 4H-SiC CMOS
p.103

On the Frequency Dependence of the Gate Switching Instability in Silicon Carbide MOSFETs
p.109

Robustness of SiC MOSFETs under Repetitive High Current Pulses
p.119

Reliability of SiC MOSFET Power Modules under Consecutive H3TRB and Power Cycling Stress
p.127

Chip-Top Packaging Technology for SiC Devices Operational at 250°C with Power-Cycling Durability of over 300,000 Cycles
p.135

Avalanche Robustness Investigation of SiC Avalanche Diodes at High Temperatures
p.145

AC-Stress Degradation in SiC MOSFETs
p.151

Power Cycling on Lateral GaN and β-Ga₂O₃ Transistors
p.157

Temperature Dependence of the Channel and Drift Resistance of SiC Power MOSFETs Extracted from I-V and C-V Measurements
p.165

HomeMaterials Science ForumMaterials Science Forum Vol. 1092Chip-Top Packaging Technology for SiC Devices...

Chip-Top Packaging Technology for SiC Devices Operational at 250°C with Power-Cycling Durability of over 300,000 Cycles

Abstract:

This study reports on our cutting-edge packaging technology that achieves high power-cycling (PC) durability of silicon carbide (SiC) devices in high-temperature environments up to 250 °C. The key to improving durability is the precise adjustment of the coefficient of thermal expansion (CTE) of the buffer layer bonded onto the SiC chip. It suppresses the creep rupture of the aluminum chip electrode, resulting in a 2.7-fold improvement in the lifetime at 200 °C from the previously reported 334,000 to 905,000 cycles. The developed structure is subjected to a 250 °C test and a lifetime of 350,000 cycles is successfully demonstrated.

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Periodical:

Materials Science Forum (Volume 1092)

Pages:

135-144

DOI:

https://doi.org/10.4028/p-9193mf

Citation:

Cite this paper

Online since:

June 2023

Authors:

So Tanaka*, Jiro Shinkai, Masato Ikegawa, Fumiki Kato, Hiroshi Sato, Hiromi Kurashima, Yasuki Mikamura

Keywords:

CIC, Coefficient of Thermal Expansion (CTE), Invar, Power-Cycling Test, SiC, Sintered Cu

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Creative Commons CC BY 4.0

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* - Corresponding Author

References

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