Robustness of SiC MOSFETs under Repetitive High Current Pulses

Abstract:

In this paper the robustness of state of the art SiC MOSFETs is analyzed under repetitivehigh current pulses far beyond the nominal values specified in their data sheets. SiC MOSFETs aremore and more used in many power electronics-based applications, such as industrial motor controlunits. During start-up events or load changes of such motors sudden high current pulses may occur.This imposed stress might trigger the drift of electrical parameters that can limit the operating rangeand lifetime of commercially available SiC MOSFETs. Nevertheless, the tested devices withstoodmillions of repetitive high current pulses several times higher than the rated nominal current withoutany signs of degradation.

• Periodical: Materials Science Forum (Volume 1092)
• Pages: 119-125
• DOI: https://doi.org/10.4028/p-hpfivz
• Online since: June 2023
• Authors: Bettina Findenig*, Markus Sievers, Ingo Voss, Thomas Aichinger
• Keywords: Clamped Inductive Switching, Degradation Monitoring, Device Characterization, High Current Stress, Robustness Validation, SiC MOSFET

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