On the Frequency Dependence of the Gate Switching Instability in Silicon Carbide MOSFETs
p.109
p.109
Robustness of SiC MOSFETs under Repetitive High Current Pulses
p.119
p.119
Reliability of SiC MOSFET Power Modules under Consecutive H3TRB and Power Cycling Stress
p.127
p.127
Chip-Top Packaging Technology for SiC Devices Operational at 250°C with Power-Cycling Durability of over 300,000 Cycles
p.135
p.135
Avalanche Robustness Investigation of SiC Avalanche Diodes at High Temperatures
p.145
p.145
AC-Stress Degradation in SiC MOSFETs
p.151
p.151
Power Cycling on Lateral GaN and β-Ga2O3 Transistors
p.157
p.157
Temperature Dependence of the Channel and Drift Resistance of SiC Power MOSFETs Extracted from I-V and C-V Measurements
p.165
p.165
Humidity Robustness of 3.3kV SiC-MOSFETs for Traction Applications - Compared to Standard Silicon IGBTs in Identical Packages
p.171
p.171
Avalanche Robustness Investigation of SiC Avalanche Diodes at High Temperatures
Abstract:
The avalanche robustness of 430 V SiC avalanche diodes at high temperatures is investigated. The UIS test was performed with fixed avalanche time in order to avoid the effect of a thermal diffusion time on an avalanche energy. It is found that the avalanche energies at 25 are 10.5 J/cm2 for and 12.7 J/cm2 for while those at 170 are 8.02 J/cm2 and 9.96 J/cm2, respectively. Their temperature coefficients are about-0.018 J/cm2K, which are much smaller than those of typical SiC-MOSFETs, indicating that the SiC diodes maintain great avalanche robustness even at high temperatures.
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Periodical:
Materials Science Forum (Volume 1092)
Pages:
145-149
Citation:
Online since:
June 2023
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