Reliability of SiC MOSFET Power Modules under Consecutive H3TRB and Power Cycling Stress

Abstract:

Power semiconductor modules are subject to both thermo-mechanical stress and electro-chemical stress during field operation. Usually, those stressors are investigated separately and possible interaction of both degradation mechanisms is neglected. In this work, the effect of combined thermo-mechanical and electro-chemical stress is investigated by means of consecutive H3TRB and PCT testing. One test group had been subjected to power cycling before the H3TRB test was performed, while another test group had been exposed to H3TRB stress before the power cycling test. As a reference, devices without preconditioning were tested in both, H3TRB and power cycling and are also used to compare the H3TRB and power cycling performance of the SiC devices to similar silicon devices. The results show, that the SiC devices feature a significantly better H3TRB performance than comparable silicon devices, but are inferior in terms of power cycling performance. Furthermore, the results for both test groups of the combined tests indicate that the failure modes for the previously stressed devices were the same as for the pristine devices and no impact of either preceding stress on the devices' lifetime could be observed. Therefore, the results of this work suggest no interaction between both stressors, at least not for the devices used for this investigation.

• Periodical: Materials Science Forum (Volume 1092)
• Pages: 127-133
• DOI: https://doi.org/10.4028/p-3g1w6r
• Online since: June 2023
• Authors: Felix Hoffmann*, Stefan Schmitt, Nando Kaminski
• Keywords: Combined Testing, H3TRB, High Humidity High Temperature Reverse Bias, Multimodal Reliability Testing, PC, Power Cycling, Reliability, SiC MOSFET

References

[1] B. Kostka, D. Herwig, M. Hanf, C. Zorn, and A. Mertens, "A concept for detection of humidity- driven degradation of igbt modules," IEEE Transactions on Power Electronics, vol. 36, no. 12, pp.13-355–13 359, 2021.

DOI: 10.1109/tpel.2021.3090149

[2] M. Mermet-Guyennet and M. Piton, "Railway traction reliability," in 2010 6th International Conference on Integrated Power Electronics Systems, 2010.

[3] T. Barbieri, A. Barkley, E. Ayerbe, Z. Major, M. Tauer, J. Young, and D. Gajewski, "Reliability Testing of SiC JBS Diodes for Harsh Environment Operation," in PCIM Europe 2018; Interna- tional Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, 2018.

[4] F. Hoffmann, S. Schmitt, and N. Kaminski, "Comparison of the h3trb performance of silicon and silicon carbide power modules," Materials Science Forum, vol. 1062, p.487–492, 2022.

DOI: 10.4028/p-7j50kd

[5] C. Herold, J. Sun, P. Seidel, L. Tinschert, and J. Lutz, "Power Cycling Methods for SiC MOS- FETs," in 2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD), 2017, p.367–370.

DOI: 10.23919/ispsd.2017.7988994

[6] F. Hoffmann, N. Kaminski, and S. Schmitt, "Comparison of the power cycling performance of silicon and silicon carbide power devices in a baseplate less module package at different temper- ature swings," in 2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2021, p.175–178.

DOI: 10.23919/ispsd50666.2021.9452242

[7] N. Soltau, E. Wiesner, E. Stumpf, S. Idaka, and K. Hatori, "Electric-energy savings using 3.3 kv full-sic power-modules in traction applications," in 2020 Fifteenth International Conference on Ecological Vehicles and Renewable Energies (EVER), 2020.

DOI: 10.1109/ever48776.2020.9242996

[8] A. Hussein and A. Castellazzi, "Comprehensive design optimization of a wind power converter using sic technology," in 2018 International Conference on Smart Grid (icSmartGrid), 2018, p.34–38.

DOI: 10.1109/isgwcp.2018.8634431

[9] N. Kaminski, S. Rugen, and F. Hoffmann, "Gaining confidence - a review of silicon carbide's reliability status," in 2019 IEEE International Reliability Physics Symposium (IRPS), 2019.

DOI: 10.1109/irps.2019.8720578

[10] F. Hoffmann, N. Kaminski, and S. Schmitt, "Investigation on the impact of environmental stress on the thermo-mechanical reliability of igbts by means of consecutive h3trb and pct testing," in 2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2021, p.371–374.

DOI: 10.23919/ispsd50666.2021.9452227

[11] C. Zorn and N. Kaminski, "Temperature humidity bias testing on insulated-gate bipolartransistor modules – failure modes and acceleration due to high voltage," IET Power Electronics, vol. 8, no. 12, p.2329–2335, 2015.

DOI: 10.1049/iet-pel.2015.0031

[12] J.-H. Peters, M. Hanf, S. Clausner, C. Zorn, and N. Kaminski, "Improved hv-h³trb robustness of a 1700 v igbt chip set in standard power modules," Microelectronics Reliability, vol. 126, p.114211, 2021, proceedings of ESREF 2021, 32nd European Symposium on Reliability of Elec- tron Devices, Failure Physics and Analysis.

DOI: 10.1016/j.microrel.2021.114211

[13] C. Herold, M. Schaefer, F. Sauerland, T. Poller, J. Lutz, and O. Schilling, "Power cycling capa- bility of modules with SiC-diodes," in CIPS 2014; 8th International Conference on Integrated Power Electronics Systems, 2014.

[14] F. Hoffmann and N. Kaminski, "Power cycling performance and lifetime estimation of 1700v sic mps diode modules with multiple chips connected in parallel," in 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2020, p.537–540.

DOI: 10.1109/ispsd46842.2020.9170187