Temperature Dependence of the Channel and Drift Resistance of SiC Power MOSFETs Extracted from I-V and C-V Measurements

Roger Stark; Alexander Tsibizov; Salvatore Race; Thomas Ziemann; Ivana Kovacevic-Badstuebner; Ulrike Grossner

doi:10.4028/p-06b54k

Paper Titles

Chip-Top Packaging Technology for SiC Devices Operational at 250°C with Power-Cycling Durability of over 300,000 Cycles
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Avalanche Robustness Investigation of SiC Avalanche Diodes at High Temperatures
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AC-Stress Degradation in SiC MOSFETs
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Power Cycling on Lateral GaN and β-Ga₂O₃ Transistors
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Temperature Dependence of the Channel and Drift Resistance of SiC Power MOSFETs Extracted from I-V and C-V Measurements
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Humidity Robustness of 3.3kV SiC-MOSFETs for Traction Applications - Compared to Standard Silicon IGBTs in Identical Packages
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Reliability and Standardization for SiC Power Devices
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Energy-Dependent Impact of Proton Irradiation on 4H-SiC Schottky Diodes
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Impact of Bias Temperature Instabilities on the Performance of Power Electronics Employing SiC MOSFETs
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HomeMaterials Science ForumMaterials Science Forum Vol. 1092Temperature Dependence of the Channel and Drift...

Temperature Dependence of the Channel and Drift Resistance of SiC Power MOSFETs Extracted from I-V and C-V Measurements

Abstract:

SiC power MOSFETs show very promising electrical performance for efficient and reliable high temperature operation. This work presents a novel approach for the determination of the temperature dependence of SiC power MOSFET’s channel and drift resistance components in the on-state, which are extracted based on current-voltage (I-V) and capacitance-voltage (C-V) measurements without the need of data extrapolation. The results show that the channel resistance has weak, whereas the drift resistance has strong temperature dependence.

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Periodical:

Materials Science Forum (Volume 1092)

Pages:

165-170

DOI:

https://doi.org/10.4028/p-06b54k

Citation:

Cite this paper

Online since:

June 2023

Authors:

Roger Stark*, Alexander Tsibizov, Salvatore Race, Thomas Ziemann, Ivana Kovacevic-Badstuebner, Ulrike Grossner

Keywords:

Channel Resistance, C-V, Drift Resistance, On-State Resistance, Power MOSFET, SiC

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Creative Commons CC BY 4.0

Citation:

* - Corresponding Author

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