Preface
Effects of Sulfurization on the Properties of 4H-SiC Schottky Contacts
p.1
p.1
C-Face Epitaxy for Enhanced SiC Device Performance: Insights from Schottky Barrier Diodes
p.9
p.9
Indium-Tin-Oxide (ITO) Interlayer-Assisted Ohmic Contacts on n-Type 4H-SiC with Low Specific Contact Resistance
p.15
p.15
Trench Etch Processing for SiC Superjunction Schottky Diodes
p.21
p.21
Argon Plasma Treatment of 4H-SiC Surface before Nickel Ohmic Contacts Formation by UV Laser Annealing
p.31
p.31
Analysis of Ohmic Contacts Simultaneously Formed on both n-Type and p-Type 4H-SiC
p.37
p.37
Gate Oxide Performance and Reliability on SmartSiC™ Wafers and the Influence of RTA Processing on Gate Oxide Lifetime
p.45
p.45
Damage Evaluation and Elemental Analysis of SiC Wafers Processed by Water Jet Guided Laser
p.55
p.55
Preface
Abstract:
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