C-Face Epitaxy for Enhanced SiC Device Performance: Insights from Schottky Barrier Diodes

Qin Gui Roth Voo; Abdul Hannan Yeo; Lakshmi Kanta Bera; Umesh Chand; Yu Chieh Chien; Xuan Sang Nguyen; Wen Dong Song; Shiv Kumar; Hung Ming Chua; Navab Singh; Surasit Chung; Shane Kam; Marcin Zielinski; Loic Kabelaan; Walter Schwarzenbach; Ionut Radu; Loann Boudin

doi:10.4028/p-XywF2P

Paper Titles

Preface

Effects of Sulfurization on the Properties of 4H-SiC Schottky Contacts
p.1

C-Face Epitaxy for Enhanced SiC Device Performance: Insights from Schottky Barrier Diodes
p.9

Indium-Tin-Oxide (ITO) Interlayer-Assisted Ohmic Contacts on n-Type 4H-SiC with Low Specific Contact Resistance
p.15

Trench Etch Processing for SiC Superjunction Schottky Diodes
p.21

Argon Plasma Treatment of 4H-SiC Surface before Nickel Ohmic Contacts Formation by UV Laser Annealing
p.31

Analysis of Ohmic Contacts Simultaneously Formed on both n-Type and p-Type 4H-SiC
p.37

Gate Oxide Performance and Reliability on SmartSiC™ Wafers and the Influence of RTA Processing on Gate Oxide Lifetime
p.45

Damage Evaluation and Elemental Analysis of SiC Wafers Processed by Water Jet Guided Laser
p.55

HomeMaterials Science ForumMaterials Science Forum Vol. 1159C-Face Epitaxy for Enhanced SiC Device...

C-Face Epitaxy for Enhanced SiC Device Performance: Insights from Schottky Barrier Diodes

Abstract:

This study focuses on analyzing the electrical performance and characteristics of Schottky Barrier Diodes (SBDs) on the carbon face (C-face) epitaxial layer. The C-face epitaxial layer is grown on monocrystalline 4H-SiC and has a thickness of ~ 11 μm. It displayed minimal surface roughness, with an R_q of ~ 0.3 nm. The C-face termination epitaxy was examined using grazing-angle X-ray photoelectron spectroscopy (XPS) analysis. SBDs were fabricated using a Ti/Al metal stack. Schottky Barrier Height (Φ_B) of about 1.2 eV was extracted from I-V measurements. Temperature-dependent I-V measurements demonstrated a forward voltage decrease as the temperature rises when the forward current is < 1 μA. However, for forward currents > 1 μA, the forward voltage increases with temperature. This rise in forward voltage could lead to a reduction in reverse recovery time and thus enhancing the switching speed. Additionally, the diode exhibits remarkable immunity to reverse leakage current up to 200 °C, surpassing the performance of the 6.5 kV JBS diode on Si-face 4H-SiC [1].

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Periodical:

Materials Science Forum (Volume 1159)

Pages:

9-13

DOI:

https://doi.org/10.4028/p-XywF2P

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Online since:

September 2025

Authors:

Qin Gui Roth Voo*, Abdul Hannan Yeo, Lakshmi Kanta Bera, Umesh Chand, Yu Chieh Chien, Xuan Sang Nguyen, Wen Dong Song, Shiv Kumar, Hung Ming Chua, Navab Singh, Surasit Chung, Shane Kam, Marcin Zielinski, Loic Kabelaan, Walter Schwarzenbach, Ionut Radu, Loann Boudin

Keywords:

Carbon Face Epitaxy, C-Face 4H-SiC, Schottky Barrier Diode

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Creative Commons CC BY 4.0

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* - Corresponding Author

References

[1] X. Niu, Effect of Schottky annealing temperature on reverse leakage current of 6500 V 4H-SiC JBS diodes, Journal of Crystal Growth 608 (2023) 127103.

DOI: 10.1016/j.jcrysgro.2023.127103

Google Scholar

[2] Kodigala Subba Ramaiah et al., "Growth and characterization of SiC epitaxial layers on Si- and C-face 4H SiC substrates by chemical-vapor deposition," Journal of Applied Physics, 98, no. 10 (2005).

DOI: 10.1063/1.2132520

Google Scholar

[3] A. Itoh, T. Kimoto, and H. Matsunami, "High performance of high-voltage 4H-SiC Schottky barrier diodes," IEEE Electron Device Letters, 16, 6 (1995) 280-282.

DOI: 10.1109/55.790735

Google Scholar

[4] M. Furno, Design, Fabrication and Characterization of 1.5 mΩcm2, 800 V 4H-SiC n-Type Schottky Barrier Diodes, Materials science forum, 483-485 (2005) 941-944.

DOI: 10.4028/www.scientific.net/msf.483-485.941

Google Scholar

[5] A. Hannan, The Effect of Nitrogen Plasma Treatment Process on Ohmic Contact Formation to N-Type 4H-SiC, Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena, 359 (2024) 59-63.

DOI: 10.4028/p-fpu9au

Google Scholar

[6] Tsunenobu Kimoto and J. A. Cooper, Fundamentals of silicon carbide technology: growth, characterization, devices and applications. Singapore: John Wiley & Sons (2014).

DOI: 10.1002/9781118313534

Google Scholar