Preface
Comparison of the Irradiation Temperature Effect of on the Carrier Removal Rates in GaN and SiC
p.1
p.1
Investigation of Mechanical Stress and Warpage in 200 mm Silicon Carbide Wafers: Implications for Production Scalability
p.7
p.7
Challenges in Measuring Thin SiO2 Layers on 4H-SiC via Spectroscopic Ellipsometry
p.15
p.15
A Frequency-EBIC Technique for High Spatial Resolution of the Effective Minority Charge Carrier Lifetime in SiC PN-Junctions
p.21
p.21
Evaluation of Oxide Processing Steps in SiC Technology Using Contactless Corona-Based CV Measurements
p.29
p.29
Characterization of the Electric Field in Silicon Carbide Detectors by Optical Beam Induced Current
p.37
p.37
A Study on Simplifying the Process of a Single Cycle for Multiple Epitaxy and Implantation Method to Fabricate SiC Super Junction
p.43
p.43
Effects of 673K Temperature Anneal on a 4H-SiC CMOS NOT Logic Gate
p.49
p.49
Preface
Abstract:
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