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Characterization of the Electric Field in Silicon Carbide Detectors by Optical Beam Induced Current

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Abstract:

Silicon carbide (SiC) is a wide-bandgap semiconductor that has attracted considerable attention for the development of advanced electronic and sensing devices. Thanks to its combination of high breakdown field, excellent thermal conductivity, and chemical stability, SiC enables operation in conditions where conventional semiconductors fail. In this study, the Optical Beam Induced Current (OBIC) technique will be employed to analyze the electric field distribution within the structure of SiC bipolar diodes featuring varying epitaxial layer thicknesses. To create OBIC signal we have used ultraviolet laser beam. We have tested bipolar diodes with both 10 µm and 100 µm epilayer thicknesses. We have obtained several OBIC signals by re-scanning the same location at different reverse voltages applied to the same SiC diode. Also, Synopsis TCAD simulations of the electric field are reported for both diodes. In these simulations it is possible to observe the increase of the electric field at the edge of the devices that are observed by the OBIC measurements. In conclusion, OBIC technique aids in optimizing device design and improving overall performance.

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Periodical:

Materials Science Forum (Volume 1191)

Pages:

37-42

DOI:

https://doi.org/10.4028/p-lyf5Sy

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Cite this paper

Online since:

May 2026

Authors:

Saverio de Luca*, Alfio S. Mancuso, Annamaria Muoio, Enrico Sangregorio, Francesco La Via

Keywords:

4H-SiC Detectors, Electric Field Characterization, OBIC (Optical Beam Induced Current) Technique, Synopsis TCAD Simulations

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Creative Commons CC BY 4.0

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