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Edge Termination Design for Ultra High-Voltage (>10 kV) 4H-SiC Power Devices Using Background Doping Modulation (BDM)

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Abstract:

Achieving reliable breakdown in ultra-high-voltage (>10 kV) SiC devices is limited by edge termination design, where low epitaxial doping (~4×10¹⁴ cm⁻³) results in lateral straggle to be more prominent, therefore necessitating wider spacing between Aluminum implants in conventional floating field rings (FFRs). This study introduces a background doping modulation (BDM) scheme, incorporating a moderately doped N-type confinement region within P+ rings, enabling tighter spacing without added process complexity for high-voltage MOSFETs. Fabricated BDM-FFRs achieved >13 kV breakdown (30% higher than conventional FFRs), with leakage current <10 nA at 10 kV, while reducing termination area by 18.6%. Therefore, the BDM-FFR demonstrates a scalable, compact, and high-performance edge termination approach for next-generation ultra-high-voltage SiC devices.

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Periodical:

Materials Science Forum (Volume 1191)

Pages:

55-60

DOI:

https://doi.org/10.4028/p-4kesV3

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Cite this paper

Online since:

May 2026

Authors:

Mohamed Torky*, Justin Lynch, Nick Yun, Stephen Mancini, Miguel Hinojosa, Aivars Lelis, Woongje Sung

Keywords:

Edge Termination Techniques, Ion Implantation, Lateral Straggle, TCAD Simulation, Ultra-High-Voltage

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Creative Commons CC BY 4.0

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