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Enhanced Breakdown Voltage and Enlarged Process Window for Junction Termination Extension in SiC Power Devices Using Hybrid Random and Channeling Implantation

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Abstract:

This work reports enhanced high-voltage blocking capability and an enlarged process window for junction termination extension (JTE) in SiC power devices using a hybrid random and channeling implantation for p-type doping (Al), compared with conventional random-only implantation. A three-step hybrid implantation process has been developed to replace a nine-step random implantation, achieving a similar doping profile and equivalent breakdown voltage in the JTE while significantly increasing fabrication productivity and reducing cost. Moreover, TCAD studies reveal that when using the same number of steps and ion energies as the conventional random implantation method, the JTE realized by the channeling-incorporated hybrid approach enables an increased breakdown voltage and a widened dose window in SiC devices. This is attributed to a deeper Al distribution with a lower average concentration, which effectively alleviates electric field crowding.

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Periodical:

Materials Science Forum (Volume 1191)

Pages:

75-79

DOI:

https://doi.org/10.4028/p-9L9dhm

Citation:

Cite this paper

Online since:

May 2026

Authors:

Shui You Zheng, Xing Jun Luo, Hua Xing Jiang*

Keywords:

Breakdown Voltage, Channeling Implantation, Junction Termination Extension (JTE), Process Window, SiC

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RIS, BibTeX

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Creative Commons CC BY 4.0

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* - Corresponding Author

References

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