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4H-SiC Diodes to Probe Stark Effect Detection in 7Be Decay Lifetime

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Abstract:

This study presents the design, fabrication, and electrical characterization of 4H-SiC PIN diodes employed to provide a high electric field able to induce Stark effect in 7Be atoms implanted in the space charge region. Indeed, a variation in the half-life of the 7Be radioactive decay is expected to be achieved by applying an electric field of the order of 106 V/cm, which can be produced by reverse-biasing 4H-SiC diodes close to the breakdown voltage. A set of diodes of area ranging between 2.12×10-3 cm2 and 9.88×103 cm2 was designed and fabricated to reach breakdown voltages up to 1000 V. When tested under reverse current limitation set equal to 300 nA, over 50% out of 24 devices could withstand reverse bias exceeding 800 V. This work reports on the characteristics of one diode of 9.88×103 cm2 area, implanted with 7Be and subject to continuous reverse-bias at 750 V for 107 days. Electrical characterization conducted before, during, and after long-term polarization highlighted an increase in the reverse current generation due to implantation-related defects, which however does not affect the breakdown voltage. These considerations lead to the conclusion that the electric field acting on the implanted ⁷Be remains stable over time, confirming the suitability of 4H-SiC diodes for both induction and measurement of 7Be lifetime variations.

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Periodical:

Materials Science Forum (Volume 1191)

Pages:

69-73

DOI:

https://doi.org/10.4028/p-5ozE8T

Citation:

Cite this paper

Online since:

May 2026

Authors:

Virginia Boldrini, Marica Canino*, Marco Pieruccini, Vincenzo Carrano, Heinz C. Neitzert, Luigi di Benedetto, Claudio Santonastaso, Raffaele Buompane, Maria Lucia Mitsou, Nicola Casali, Ravi Prakash Yadav, Matthias Laubenstein, Cristian Degli Esposti Boschi, Alfredo Rubino, Alba Formicola, Lucio Gialanella

Keywords:

4H-SiC, Be Ion Implantation, High Voltage Reverse Current, p+/n Diodes, Radioactive Decay

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Creative Commons CC BY 4.0

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