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Evaluation of Oxide Processing Steps in SiC Technology Using Contactless Corona-Based CV Measurements

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Abstract:

An area of increasing interest for SiC device processing is the processing and qualification of silicon oxides. In this article a contactless corona CV (CnCV) measurement procedure is evaluated as a way to gain more knowledge about the different processes related to oxides. A 21-point measurement pattern is used to gain information about uniformity of oxide properties. Two different types of oxides have been considered, low pressure chemical vapor deposited (CVD) oxides using tetraethylorthosilicate (TEOS) and thermally grown oxides. The two different groups have received different combinations of pre- and post-processing steps prior to measurements. As expected, low pressure CVD (LPCVD) and thermally grown SiO2 without any post oxidation annealing (POA) showed significantly different electrical characteristics compared to the wafers that did get a POA. This difference could clearly be distinguished by CnCV, meaning that individual process steps can be analyzed without the fabrication of any test structures on the wafers. As the individual process steps can be analyzed, the uniformity of the individual steps can be accessed. Using a 21-point pattern it was possible to show that there is a non-uniformity in the LPCVD process used prior to the POA. This makes the CnCV technique suitable for in-line characterization and process monitoring.

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Periodical:

Materials Science Forum (Volume 1191)

Pages:

29-35

DOI:

https://doi.org/10.4028/p-iPd033

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Online since:

May 2026

Authors:

Robin Karhu*, Volker Häublein, Marshall Wilson, Mathias Rommel, Birgit Kallinger

Keywords:

CV Measurement, LPCVD TEOS, Oxide, Thermal Oxide

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Creative Commons CC BY 4.0

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