Paper Titles
Preface
Comparison of the Irradiation Temperature Effect of on the Carrier Removal Rates in GaN and SiC
p.1
Investigation of Mechanical Stress and Warpage in 200 mm Silicon Carbide Wafers: Implications for Production Scalability
p.7
Challenges in Measuring Thin SiO2 Layers on 4H-SiC via Spectroscopic Ellipsometry
p.15
A Frequency-EBIC Technique for High Spatial Resolution of the Effective Minority Charge Carrier Lifetime in SiC PN-Junctions
p.21
Evaluation of Oxide Processing Steps in SiC Technology Using Contactless Corona-Based CV Measurements
p.29
Characterization of the Electric Field in Silicon Carbide Detectors by Optical Beam Induced Current
p.37
A Study on Simplifying the Process of a Single Cycle for Multiple Epitaxy and Implantation Method to Fabricate SiC Super Junction
p.43
Effects of 673K Temperature Anneal on a 4H-SiC CMOS NOT Logic Gate
p.49

Comparison of the Irradiation Temperature Effect of on the Carrier Removal Rates in GaN and SiC

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Abstract:

In this paper, the radiation resistance of GaN and SiC is compared. The effect of the irradiation temperature on the carrier removal rate in both semiconductors during proton irradiation is considered. It was found that in GaN, as well as in SiC, the rate of carrier removal decreases with increasing irradiation temperature. The dependence of the GaN sample resistance on the radiation dose was also calculated based on a model previously proposed to describe a similar dependence for SiC. Based on the experimental data obtained, it is concluded that the processes of radiation compensation in GaN and SiC are similar.

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Periodical:

Materials Science Forum (Volume 1191)

Pages:

1-6

DOI:

https://doi.org/10.4028/p-71tmVu

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Online since:

May 2026

Authors:

Alexander A. Lebedev*, Klavdia S. Davydovskaya, V.V. Kozlovski, Michael E. Levinstein, D.A. Malevsky, Andrey E. Nikolaev, Alexey V. Sakharov, N.S. Solonitsyn

Keywords:

C-V Characteristics, GaN, Irradiation Temperature, Protons, Radiation Resistance, Resistance, SiC

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References

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