Paper Titles

Bonding Configuration and Defects in Glow-Discharge Amorphous SiN_x:H Films Deposited at 300°C and 500°C
p.335

Doped Glasses for ULSI-Technology: Integration of Molecular Engineering and Plasma-CVD
p.359

Growth Processes and Defect Densities in Hydrogenated Amorphous Silicon Alloys
p.381

Sputter Deposition of Thin Films for High Mobility Poly-Si TFT Fabrication
p.387

Ion Assisted Thin Film Growth in Dual Microwave/Radio Frequency Plasmas
p.405

High Powered Pulsed Plasma Enhanced Deposition of Thin Film Semiconductor and Optical Materials
p.421

Plasma-Enhanced Chemical Vapour Deposition of Coatings in the System Ti-B-N
p.439

Plasma-Enhanced Metalorganic Chemical Vapor Deposition for High Temperature Superconducting Thin Film
p.457

Low Pressure and Low Temperature Synthesis of Diamond Films Using Magneto-Microwave Plasma CVD
p.465

HomeMaterials Science ForumMaterials Science Forum Vols. 140-142Ion Assisted Thin Film Growth in Dual...

Ion Assisted Thin Film Growth in Dual Microwave/Radio Frequency Plasmas

Article Preview

Abstract:

You might also be interested in these eBooks

Plasma Properties, Deposition and Etching

Info:

Periodical:

Materials Science Forum (Volumes 140-142)

Pages:

405-420

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.140-142.405

Citation:

Cite this paper

Online since:

October 1993

Authors:

L. Martinu, Michael R. Wertheimer

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1993 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: