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Preparation and Properties of PECVD Silicon Nitride Films from SiH₄ + NH₃ and/or NF₃ and SiF₄+ NH₃ Gas Mixtures
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Bonding Configuration and Defects in Glow-Discharge Amorphous SiN_x:H Films Deposited at 300°C and 500°C
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Doped Glasses for ULSI-Technology: Integration of Molecular Engineering and Plasma-CVD
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Growth Processes and Defect Densities in Hydrogenated Amorphous Silicon Alloys
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Sputter Deposition of Thin Films for High Mobility Poly-Si TFT Fabrication
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Ion Assisted Thin Film Growth in Dual Microwave/Radio Frequency Plasmas
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High Powered Pulsed Plasma Enhanced Deposition of Thin Film Semiconductor and Optical Materials
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Plasma-Enhanced Chemical Vapour Deposition of Coatings in the System Ti-B-N
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HomeMaterials Science ForumMaterials Science Forum Vols. 140-142Growth Processes and Defect Densities in...

Growth Processes and Defect Densities in Hydrogenated Amorphous Silicon Alloys

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Periodical:

Materials Science Forum (Volumes 140-142)

Pages:

381-386

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.140-142.381

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Online since:

October 1993

Authors:

J. Robertson

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© 1993 Trans Tech Publications Ltd. All Rights Reserved

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