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Materials Science Forum Vols. 143-147

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.143-147

ToC:

Table of Contents

Paper Title Page

Charge and Site-Change Dynamics of Muonium (Hydrogen) in Si
Authors: R.L. Lichti, K.H. Chow, T.L. Estle, B. Hitti, R.F. Kiefl, S.R. Kreitzman, J.W. Schneider
915
Photo-Induced Lattice Relaxation and Dissociation of a Hydrogen-Carbon Complex in Silicon
Authors: Yoichi Kamiura, Toshihiko Okashita, Fumio Hashimoto
921
Interaction between X-H Bonds and the Lattice in III-V Compounds Determined from Temperature-Dependent Spectroscopic Studies
Authors: R. Darwich, C. Song, R. Rahbi, B. Pajot
927
Depth Distribution of Diffused Hydrogen in n-Type GaAs
Authors: G. Roos, N.M. Johnson, C. Herring, J. Walker
933
Deep Levels of Vanadium- and Chromium-Hydrogen Complexes in Silicon
Authors: Taizoh Sadoh, M. Watanabe, H. Nakashima, T. Tsurushima
939
Deuterium Effusion from InP
Authors: B. Theys, Jacques Chevallier
945
Position of the Hydrogen Acceptor Level in n-GaAs:Si and n-AlGaAs:Si Deduced from Hydrogen Diffusion Modelling
Authors: B. Machayekhi, R. Rahbi, B. Theys, M. Miloche, Jacques Chevallier
951
Effect of Carbon on Anharmonic Vibration of Oxygen in Crystalline Silicon
Authors: C. Kaneta, Hiroshi Katayama-Yoshida, Tokuhito Sasaki
957
The Kinetics of Oxygen Loss and Thermal Donor Formation in Silicon at Temperatures between 350°C and 500°C
Authors: S.A. McQuaid, Charalamos A. Londos, M.J. Binns, R.C. Newman, J.H. Tucker
963
A Piezo-Spectroscopic Study of Oxygen-Vacancy Centers in Silicon
Authors: B. Pajot, S.A. McQuaid, R.C. Newman, C. Song, R. Rahbi
969

Showing 151 to 160 of 275 Paper Titles

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