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HomeMaterials Science ForumMaterials Science Forum Vols. 143-147

Materials Science Forum Vols. 143-147

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.143-147

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Paper Title Page

Ab-Initio Calculation of the Hyperfine Fields for Deep A₁ Donors in GaAs under Pressure

Authors: Harald Overhof

1035

Magneto-Optical and ODEPR Investigations of Silicon Doped Al_xGa_1-xAs

Authors: Matthias Linde, Tomasz Pawlik, Harald Overhof, Johann Martin Spaeth

1041

First Observation of a Metastable Character of Irradiation-Induced Defects in GaAs-GaAlAs Superlattices

Authors: S.L. Feng, J. Zhou, L.W. Lu

1047

Symmetry of the Acceptor-Like State of the EL2 Defect in the Metastable Configuration

Authors: A. Babiński, Andrzej Wysmolek, M. Baj

1051

The Ultrasonics-Induced-Quenching of PPC Related to DX Centers in Al_xGa_1-xAs

Authors: A.E. Belyaev, Hans Jürgen von Bardeleben, M.L. Fille, E. Oborina, Yu.S. Ryabchenko, A.U. Savchuk, Moissei K. Sheinkman

1057

Influence of Ultrasound Vibrations on the Stable-Metastable Transitions of EL2 Centers in GaAs

Authors: I.A. Buyanova, Sergei S. Ostapenko, A.U. Savchuk, Moissei K. Sheinkman

1063

Electron-Phonon Coupling at Deep-Level Defects and the Metastable Transition of EL2

Authors: Marilia J. Caldas, E. Molinari

1069

Pressure Induced *-Shallow - Deep A₁ Transition for Group VI:S, Se, and Group IV:Ge Donors in GaAs

Authors: J.E. Dmochowski, R.A. Stradling, D.J. Dunstan, A.D. Prins, A.R. Adams, K.E. Singer, T. Fujisawa, H. Kukimoto

1075

Properties of Resonant Localized Donor Level in Low-Temperature-Grown InP

Authors: P. Dreszer, W.M. Chen, Dariusz Wasik, W. Walukiewicz, B.W. Liang, C.W. Tu, Eicke R. Weber

1081

Kinetics of Electron Capture on DX Centers under High Pressure

Authors: Igor E. Itskevich

1087