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HomeMaterials Science ForumMaterials Science Forum Vols. 143-147

Materials Science Forum Vols. 143-147

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.143-147

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Table of Contents

Paper Title Page

Passivation and Reactivation of (H,P) Pairs in Si

Authors: S.K. Estreicher, R. Jones

1215

The Nitrogen Pair in Crystalline Silicon Studied by Ion Channeling

Authors: F. Berg Rasmussen, B. Bech Nielsen, R. Jones, Sven Öberg

1221

Vacancies and {V,H_n} Complexes in Si: Stable Structures, Relative Stability, and Diffusion Properties

Authors: M.A. Roberson, S.K. Estreicher, L. Korpás, J.W. Corbett

1227

The Nature of Trigonal Centers in Iron-Doped p-Type Silicon

Authors: W. Gehlhoff, K. Irmscher, U. Rehse

1233

Annealing of Electron Irradiated P-, As-, Sb- and Bi-Doped Czochralski Silicon

Authors: T. Hallberg, J. Lennart Lindström, Bengt Gunnar Svensson, Krzysztof Swiatek

1239

Relative Stability of H^T vs. H^* and H^T₂ vs. H^*₂ in c-C, Si, Ge and α-Sn and Their Consequences

Authors: Djordje M. Maric, M.A. Roberson, S.K. Estreicher

1245

On the Pairing between Indium and Carbon Atoms in Silicon

Authors: U. Ott, Herbert Wolf, Th. Krings, Th. Wichert, H. Hässlein, R. Sielemann, Manfred Deicher, R.C. Newman, W. Zulehner

1251

Iron-Phosphorus Interaction in Si

Authors: H. Takahashi, Masashi Suezawa, Koji Sumino

1257

Vacancy-Assisted Diffusion of Si in GaAs: Microscopic Theory

Authors: Jaroslaw Dąbrowski, J. Northrup

1263

Polarized Photoluminescence in Highly Si-Doped GaAs

Authors: Masashi Suezawa, Y. Nishina, Koji Sumino

1269