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HomeMaterials Science ForumMaterials Science Forum Vols. 143-147

Materials Science Forum Vols. 143-147

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.143-147

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Table of Contents

Paper Title Page

Phenomenon of Two-Step Alignment of V_GaSn_Ga Complexes in GaAs under Uniaxial Pressure

Authors: A.A. Gutkin, M.A. Reshchikov, V.R. Sosnovskij

1275

Photoexcitation of Defects Related to B in GaAs

Authors: Masashi Suezawa, Koji Sumino

1281

Magnetotunnelling through 1s- and 2p-Like Donor States in the Quantum Well of Resonant-Tunnelling Diodes

Authors: P.W. Barmby, T.M. Fromhold, Janette L. Dunn, Colin A. Bates, F.W. Sheard, L. Eaves

1287

Theoretical Study on the Electronic States of Dislocations and Dislocation Motion in Semiconductors

Authors: Kinichi Masuda-Jindo

1293

Ab Initio Cluster Theory of Substitutional Oxygen in Silicon

Authors: A.B. van Oosten

1299

First-Principles Simulations of Vacancies and Antisites in InP

Authors: R. Virkkunen, A.P. Seitsonen, M.J. Puska, Risto M. Nieminen

1305

Scanning Tunneling Microscopy and Spectroscopy of Arsenic Antisite Defects in GaAs

Authors: R.M. Feenstra, J.M. Woodall, G.D. Pettit

1311

Scanning Tunneling Microscopy of Si Donors in GaAs

Authors: Jun-Fei Zheng, X. Liu, N. Newman, Eicke R. Weber, D.F. Ogletree, M.B. Salmeron

1319

X-Ray Triple Crystal Diffractometry of Structural Defects in Si_mGe_n Superlattices

Authors: E. Koppensteiner, P. Hamberger, G.H. Bauer, V. Holy, H. Kibbel, H. Presting, Erich Kasper

1325

GIXA, a Novel Technique in Near-Surface Analysis

Authors: W.V.D. Hoogenhof, D.K.G. De Boer

1331