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HomeMaterials Science ForumMaterials Science Forum Vols. 143-147

Materials Science Forum Vols. 143-147

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.143-147

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Paper Title Page

Optically Detected Magnetic Resonance Investigations on Rapidly Thermally Oxidized Porous Silicon

Authors: D.M. Hofmann, B.K. Meyer, W. Stadler, A. Kux, V. Petrova-Koch, F. Koch

1459

The Relative Importance of Radiative and Non Radiative Recombinations in the Luminescence of Porous Silicon

Authors: Christian Delerue, Michel Lannoo, G. Allan

1463

Association of Non-Radiative ODMR with the Non-Visible Emitting Regions within Porous-Si

Authors: Yasunori Mochizuki, Masashi Mizuta

1469

Electrical Characterization of Surface Defects on Porous p-Type Silicon

Authors: C. Cadet, D. Deresmes, D. Vuillaume, Didier Stiévenard, A. Grosman, C. Ortega, J. Siejka, Hans Jürgen von Bardeleben

1475

Luminescence due to Oxygen Induced Chemical Confinment on a Silicon Surface

Authors: Peter Deák, G. Kostyál, M. Rosenbauer

1481

Defects in As-Prepared and Thermally Oxydized Porous Silicon

Authors: Hans Jürgen von Bardeleben, A. Grosman, V. Morazzani, C. Ortega, J. Siejka

1487

Carbon as a Probe of Edge-Defined Film-Fed Growth Silicon

Authors: Seung Chul Park, Gordon Davies, Victor Higgs, William D. Sawyer

1493

Luminescence Associated with Rod-Like Defects in Czochralski Silicon

Authors: L. Jeyanathan, Edward C. Lightowlers, V. Higgs, Gordon Davies

1499

Phase Transitions at the Amorphous/Crystalline Interface in Ion-Implanted Silicon and Their Role in End-of-Range Defect Formation

Authors: Michael Seibt, J. Imschweiler, H.A. Hefner

1505

Au-Related Deep States in the Presence of Extended Defects in N-Type Silicon

Authors: M. Kaniewska, J. Kaniewski, Anthony R. Peaker

1511