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Vols. 143-147
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Materials Science Forum Vols. 143-147

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.143-147

ToC:

Table of Contents

Paper Title Page

Interaction between Supersaturated Transition Metals (Cu, Ni, Fe) and Extended Defects in CZ-Si
Authors: J. Jablonski, J. Kaniewski, M. Kaniewska, Takashi Sekiguchi, L. Ornoch, Koji Sumino
1517
Control of Size and Density of Stacking Fault in Silicon by Gold Diffusion
Authors: Masami Morooka, Manabu Takahashi, Fumio Hashimoto
1523
On the Influence of Transition Metal Impurities on the Oxygen Precipitation in CZ-Grown Silicon
Authors: Manfred Reiche
1529
Implantation of Carbon in GaAs and Compensating Native Defects
Authors: Amy J. Moll, J.W. Ager, Kin Man Yu, W. Walukiewicz, Eugene E. Haller
1535
The Influence of Process-Induced Surface Defects on Luminescence and Transport Properties of Low-Dimensional Structures
Authors: P. Emanuelsson, I. Maximov, H. Linke, P. Omling, L. Samuelson, B.K. Meyer
1541
Deep Level Defects Detection in Degrading GaAs/AlGaAs Quantum Well Laser
Authors: M.M. Sobolev, A.V. Gittsovich, S.G. Konnikov, I.V. Kochnev, B.S. Yavich
1547
Influence of Electron Irradiation Induced Defects on the Current-Voltage Characteristics of a Resonant Tunneling Diode
Authors: B. Grandidier, Didier Stiévenard, D. Deresmes, O. Vanbesien, D. Lippens, J.L. Lorriaux, M. Zazoui
1553
Electronic Properties of Defects Introduced during Electron and Alpha Irradiation of GaAs
Authors: F. Danie Auret, S.A. Goodman, W.E. Meyer, R.M. Erasmus, G. Myburg
1559
Influence of Micro-Inhomogeneities on the Electron Mobility in Undoped N-Type LEC GaAs
Authors: W. Siegel, G. Kühnel, Hartmut Witte, U. Kretzer
1565
Dislocation-Induced Defect Levels in Silicon
Authors: W. Staiger, G. Pfeiffer, K. Weronek, A. Höpner, Joerg Weber
1571

Showing 251 to 260 of 275 Paper Titles

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