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HomeMaterials Science ForumMaterials Science Forum Vols. 143-147

Materials Science Forum Vols. 143-147

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.143-147

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Paper Title Page

Reactions of Gallium Vacancies during Annealing and Zn Diffusion in GaAs: Si

Authors: Nguyen Hong Ky, J.D. Ganière, F.K. Reinhart, B. Blanchard

1397

Defect Concentration Gradients at Semiconductor Junctions

Authors: A.R. Frederickson, P.J. Drevinsky

1403

Diffusion of Mn-Atoms during the Growth of CdTe-MnTe Superlattices

Authors: A. Adleff, G. Hendorfer, W. Jantsch, W. Faschinger

1409

Particularities of the Zn Diffusion into InGaAsP from Spin-On Polymer Films

Authors: B.Ya. Ber, L.A. Busygina, A.T. Gorelenok, Alex A. Kamanin, A.V. Merkulov, I.A. Mokina, N.M. Schmidt, I.Yu. Yakimenko, T.A. Yurre

1415

U-Shaped Diffusion Profiles of Zn Atoms in GaAs by Electron Beam Doping

Authors: A. Takeda, T. Wada

1421

Zinc Diffusion in Gallium Antimonide

Authors: G.J. Conibeer, Arthur F.W. Willoughby, C.M. Hardingham, V.K.M. Sharma

1427

Evidence of Fast Diffusion of Plasma-Induced Centers in GaAs by Photo-Reflectance Spectroscopy

Authors: Kazumi Wada, Hideo Nakanishi

1433

Influence of Spatial Coulomb Potential Fluctuations on the Mobility in Al_xGa_1-xAs with DX Centers

Authors: G. Ostermayer, G. Brunthaler, W. Jantsch, Zbysław Wilamowski

1439

Impurity Self-Screening

Authors: Zbysław Wilamowski, Hanka Przybylinska

1445

Defects and Recombination in Disordered Silicon

Authors: Martin Stutzmann, Martin S. Brandt

1451