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HomeMaterials Science ForumMaterials Science Forum Vols. 143-147

Materials Science Forum Vols. 143-147

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.143-147

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Paper Title Page

Electrically Detected Electron Paramagnetic Resonance

Authors: Siegmund Greulich-Weber

1337

Magnetic Resonance Techniques for Excited State Spectroscopy of Defects in Silicon

Authors: W.M. Chen, Bo Monemar, A.M. Frens, M.T. Bennebroek, J. Schmidt

1345

Optically Detected Cyclotron Resonance for Defect Characterization

Authors: Marek Godlewski, W.M. Chen, Bo Monemar

1353

Spin Dependent Recombination: An Improved Theory Applied to Deep Centers in Silicon

Authors: Michel Lannoo, Didier Stiévenard, D. Deresmes, D. Vuillaume

1359

Contactless Photothermal Ionization Spectroscopy of Shallow Defects in Semiconductors

Authors: Boris A. Andreev, V.B. Ikonnikov, E.B. Koslov, T.M. Lifshits, V.B. Shmagin

1365

Observation of Rapid Direct Charge Transfer between Deep Defects in Silicon

Authors: A.M. Frens, M.T. Bennebroek, A.J. Zakrzewski, J. Schmidt, W.M. Chen, Erik Janzén, J. Lennart Lindström, Bo Monemar

1371

Detection of Nonradiative Transition in P⁺⁺ Ion Implanted p-Si by a Photoacoustic Spectroscopy

Authors: Tetsuo Ikari, H. Matsuyama, Y. Akashi, Kengo Futagami

1375

DLTS of Recombination Centres in Semiconductors

Authors: Tomas Markvart, D.P. Parton, J.W. Peters, Arthur F.W. Willoughby

1381

Raman Study of 'Boson Peak' in Ion-Implanted GaAs: Dependence on Ion Dose and Dose Rate

Authors: Mile Ivanda, U.V. Desnica, T.E. Haynes

1387

A Model for Anharmonic Vibrational Excitation of <111>-Bond-Interstitial Impurities in Si and Ge Crystals

Authors: Hiroshi Yamada-Kaneta, H. Mori

1391