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HomeMaterials Science ForumMaterials Science Forum Vols. 143-147

Materials Science Forum Vols. 143-147

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.143-147

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Paper Title Page

Hydrostatic Pressure Investigations of Metastable Defect States

Authors: T. Suski

975

Vacancy in the EL2 and DX Centers Studied by Positron Annihilation

Authors: Kimmo Saarinen, J. Mäkinen, Pekka J. Hautojärvi, S. Kuisma, T. Laine, C. Corbel, C. LeBerre

983

Theoretical Calculations of Antisite and Antisite-Like Defects in GaP

Authors: A. Fazzio, P.P.M. Venezuela, T.M. Schmidt

991

Pressure Dependences of Transition Energies of the As Antisite and the Ga-Vacancy-As-Interstitital Pair Compared to Stable and Metastable EL2

Authors: Christine Ziegler, Udo Scherz, Matthias Scheffler

995

Fine Structure Observed in Thermal Emission Process for the EL2 Defect in GaAs

Authors: L. Dobaczewski, P. Kaczor, Anthony R. Peaker

1001

Ordering of the EL2 Defects in the Metastable State

Authors: P. Trautman, Jacek M. Baranowski, A. Babiński

1007

Coexistence of Two Localised States of the Ge Donor in GaAs as Evidenced by a Huge Increase of the Electron Mobility at PPC Conditions

Authors: Czeslaw Skierbiszewski, P. Wiśniewski, T. Suski, Zbysław Wilamowski, G. Ostermayer, W. Jantsch, P. Walker, N.J. Mason, J. Singleton

1013

Direct Evidence for Two-Electron Occupation of Ge-DX Centers in GaAs

Authors: M. Baj, L.H. Dmowski, T. Słupiński, Dariusz Wasik

1019

Photoexcited and Metastable States of DX Centers in Si Doped Al_x Ga_1-x As

Authors: Y.B. Jia, Hermann G. Grimmeiss

1025

Deep Centers in Forward Based GaAs/AlGaAs Quantum Wells and Superlattices

Authors: Zhi Young Han, Y.B. Jia, Hermann G. Grimmeiss

1031