Materials Science Forum Vols. 258-263

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.258-263

Export:

MARCXML

ToC:

Table of Contents

Paper Title Page

Influence of Fabrication Conditions on Properties of Si:Er Light-Emitting Structures

Authors: N.A. Sobolev, A.M. Emel'yanov, Yu.A. Nikolaev, K.F. Shtel'makh, Yu.A. Kudryavtsev, V.I. Sakharov, I.T. Serenkov, M.I. Makovijchuk, E.O. Parshin

1527

High Temperature Luminescence Due to Er in Porous Si

Authors: Margarita Stepikhova, W. Jantsch, G. Kocher, M. Schoisswohl, J.L. Cantin, Hans Jürgen von Bardeleben

1533

Electron Paramagnetic Resonance of Erbium in Bulk Silicon Carbide Crystals

Authors: P.G. Baranov, Ivan V. Ilyin, E.N. Mokhov

1539

1.54 μm Luminescence in Er and Er+O Implanted 6H SiC

Authors: A. Kozanecki, W. Jantsch, S. Lanzerstorfer, Brian J. Sealy, S. Jackson

1545

Authors: Anthony R. Peaker, F. Coppinger, H. Efeoglu, J.H. Evans-Freeman, D.K. Maude, Jean Claude Portal, P. Rutter, K.E. Singer, A. Scholes, Adrian C. Wright

1551

Electron Spin Resonance of Er-Oxygen Complexes in GaAs

Authors: T. Ishiyama, E. Katayama, Kenichiro Takahei, Akihito Taguchi, Kenji Murakami

1559

Er Centers in GaAs Studied by Optical Spectroscopy Under Hydrostatic Pressure

Authors: R.A. Hogg, Akihito Taguchi, Kenichiro Takahei

1565

EXAFS Measurement on Local Structure Around Erbium Atoms Doped in GaAs with Oxygen Co-Doping

Authors: M. Tabuchi, H. Ofuchi, T. Kubo, Kenichiro Takahei, Yoshikazu Takeda

1571

Luminescence and Annealing Studies of Er-Implanted GaN with and without Oxygen Co-Doping

Authors: E. Silkowski, Y.K. Yeo, R.L. Hengehold, L.R. Everitt